Effect of high pressure annealing on defect structure of GaMnAs

Przemysław Romanowski 1Jadwiga Bak-Misiuk 1Elzbieta Dynowska 1Andrzej Misiuk 2Jaroslaw Domagala 1Elżbieta Lusakowska 1Janusz Sadowski 1Wolfgang Caliebe 3Adam Barcz 1,2

1. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
2. Institute of Electron Technology (ITE), al. Lotników 32/46, Warszawa 02-668, Poland
3. Hamburger Synchrotronstrahlungslabor HASYLAB (HASYLAB), Notkestrasse 85, Hamburg D-22603, Germany

Abstract

A rapid development of spintronics is observed recently. This exciting new field of research combines magnetism and electronics or optoelectronics. The best materials are so called diluted magnetic semiconductors, i.e. mixed crystals based on classical semiconductors, with a controlled fraction of nonmagnetic atoms being substituted by the magnetic ones, e.g. in GaMnAs.

The 001 oriented GaMnAs layers were grown by the MBE method. The samples were subjected to processing at temperatures T, up to 650 K for 1h under 105 Pa and up to 920 K under high hydrostatic pressure (HP = 1.1 GPa) in argon atmosphere.

The defect structure of samples was determined by high resolution X-ray diffraction methods using conventional and synchrotron radiation sources (HASYLAB-DESY). Synchrotron radiation in the grazing incident diffraction geometry was applied to examine the near-surface region of samples. Conventional X-ray investigations were carried out using MRD-PHILIPS diffractometer in the double and triple axis configurations. Lattice parameters for GaMnAs, before and after the treatment, were measured. Reciprocal space maps for (004) symmetrical reflections were registered. Roughness in the direction perpendicular to the surface and Mn depth profiles were determined using Atomic Force Microscopy and Secondary Ion Mass Spectroscopy, respectively.

The temperature-pressure treatment makes it possible to modify the GaMnAs structure. The high pressure treatment effects in changed diffusivity of Mn interstitials in GaMnAs. Enhanced pressure applied during annealing of the MBE grown layers results in increased strain. Changed strain, from the compressive to tensile one, can be related to a creation of zincblende Mn(Ga)As nanoclusters. A creation of nanoclusters under HP-T conditions is more effective than that caused by annealing under 105Pa.

Acknowledgements:

The work was partially supported by the Ministry of Education and Science of Poland under the grant No. N20205232/1189.

Related papers
  1. Defect distribution along needle-shaped PrVO4 single crystals grown by the slow-cooling method
  2. Critical exponents of dilute ferromagnetic semiconductors (Ga,Mn)N and (Ga,Mn)As
  3. GaN substrates with variable surface miscut for laser diode applications
  4. Impact of substrate microstructure on self-induced nucleation and properties of GaN nanowires grown by plasma-assisted MBE
  5. Neutron scattering studies of short-period MnTe/ZnTe superlattices: magnetic order, magnon propagation and confinement
  6. X-ray diffraction studies of (Pb,Cd)Te solid solution – possible new material for thermoelectric applications
  7. Hexagonal MnTe with NiAs structure: thermal expansion coefficients and exchange striction
  8. Optical properties of GaAs:Mn nanowires
  9. 1D ZnO-based structures obtained by thermal oxidation of ZnTe and ZnTe/Zn nanowires
  10. Photoreflectance study of Ga(Bi,As) and (Ga,Mn)As epitaxial layers grown under tensile and compressive strain
  11. Physical properties of unique ZnO single crystals from Oława Foundry
  12. MBE growth, structural, magnetic, and electric properties of (In,Ga)As-(Ga,Mn)As core-shell nanowires
  13. New Ca10Li(VO4)7 laser host: growth and properties
  14. Quaternary (Ga,Mn)BiAs ferromagnetic semiconductor -MBE growth, structural and magnetic properties
  15. Electronic and optical properties – As and As+Sb doped ZnO grown by PA-MBE
  16. Stany Mn 3d w paśmie walencyjnym Ga1-xMnxSb
  17. Influence of substrate on crystallographic quality of AlGaN/GaN HEMT structures grown by MBE
  18. X-ray measurements of type II InAs/GaSb superlattice in a wide angular range using the P08 beamline at PETRAIII
  19. Damage of gallium arsenide created after irradiation by ultra-short VUV laser pulse
  20. Low-temperature expansion of metastable Pb1-xCdxTe solid solution
  21. Investigation of strain and lattice parameters distribution in epitaxial laterally overgrown InGaN/GaN structures 
  22. Can we control the process of room temperature ferromagnetic clusters formation in GaMnAs matrix?
  23. Monocrystalline character of ZnMgTe shell in the core-shell ZnTe/ZnMgTe nanowires
  24. Optimization of technology for contact metallization in electronic devices - XRD and EXAFS studies
  25. Structural transformations of GaMnAs layer annealed under enhanced hydrostatic pressure
  26. Surface morphology of InGaN layers
  27. Zinc oxide grown by Atomic Layer Deposition - a material for novel 3D electronics
  28. Dimethylzinc and diethylzinc as precursors for monocrystalline zinc oxide grown by Atomic Layer Deposition
  29. Thin films of ZnS and ZnSe by Atomic Layer Deposition for light sensor applications
  30. Microstructure of silicon implanted with transition metals
  31. Application of Ti-Al-N MAX-phase for contacts to GaN
  32. Transparent p-type ZnO obtained by Ag doping
  33. Structure of Si:Mn annealed under enhanced stress conditions
  34. ZnO thin films for organic/inorganic heterojunctions
  35. Gd atoms on Si (111) surface – AFM and photoemission study
  36. Electronic structure of Mn atoms in (Ga,Mn)As layers modified by high temperature annealing
  37. Optical and Spectroscopy of nanosized system on Si base after implantation and thermal treatment under enhanced hydrostatic pressure
  38. Substructure of the metal nanomaterials after the intensive external influence
  39. Reconstruction of lattice structure of ion-implanted near-surface regions of HgCdTe epitaxial layers
  40. Wide band-gap II-VI semiconductors for optoelectronic applications
  41. Influence of high temperature annealing on the local atomic structure around Mn atoms and magnetic properties of (Ga,Mn)As layers
  42. Catalytic growth by molecular beam epitaxy and properties of ZnTe-based semiconductor nanowires
  43. X-ray Diffraction as a Tool of InGaN layer Characterization.
  44. Structural inhomogenities in GdCa4O(BO3)3 single crystals
  45. Observation of defects in g - irradiated Cz-si annealed under high pressure
  46. Liquid phase growth and characterization of laterally overgrown GaSb epitaxial layers
  47. Distribution of strain in laterally overgrown GaAs layers determined by x-ray diffraction
  48. Determination of stress in composite engineered substrates for GaN-based RF power devices
  49. Effect of stress on structural transformations in GaMnAs
  50. Spectroscopy of Cz-Si samples subjected to implantation and thermal treatment under enhanced hydrostatic pressure.
  51. Comparison of various GaSb-based device structures for application in thermophotovoltaic cells
  52. Secondary Ion Mass Spectroscopic Study of Mn-Implanted Silicon after Thermal Annealing
  53. Structure and Magnetization of Defect-Associated Sites in Silicon
  54. Stress - mediated solid phase epitaxial re - growth of a-Si at annealing of Si:Mn
  55. The role of radiation defects in HgCdTe epitaxial growth
  56. Tunneling Anisotropic Magnetoresistance effect in p+-(Ga,Mn)As/n+-GaAs Esaki diode structure.
  57. Optical properties of p-type ZnO:(N, As, Sb)
  58. Optical and magnetooptical properties of the p-type ZnMnO.
  59. Effect of the Annealing Atmosphere on the Quality of ZnO Crystal Surface
  60. Structure properties of bulk ZnO crystals
  61. Formation of epitaxial MnSb and MnBi layers on GaMnAs
  62. Magnetotransport properties of ultrathin GaMnAs layers
  63. Diffusion of Mn in gallium arsenide.
  64. Giant planar Hall effect in ferromagnetic (Ga,Mn)As layers
  65. Magneto-conductance through nanoconstriction in ferromagnetic (Ga,Mn)As film
  66. Structure and related properties of Si:Mn annealed under enhanced hydrostatic pressure
  67. Buried nano-structured layers in high temperature-pressure treated Cz-Si:He
  68. Defect structure of silicon crystals implanted with nitrogen - a study of Si:N annealed under high hydrostatic pressure.
  69. Influence of enhanced temperature and pressure on structural transformations in pre-annealed Cz-Si
  70. Pressure- assistance lateral nanostructuring of the epitaxial silicon layers with SeGe quantum wells
  71. Crystalline structure and surface morphology of DyxOy films grown on Si
  72. ELECTRICAL AND OPTICAL PROPERTIES OF ZnO AND ZnO:Cr CRYSTALS, GROWN BY CVT METHOD
  73. TaSiN, TiSiN and TiWN diffusion barriers for metallization systems to GaN
  74. Transparent Conducting Oxides as Ohmic Contacts for GaSb-based Thermophotovoltaic Cells
  75. Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMT
  76. Preparation and characterization of hexagonal MnTe and ZnO layers
  77. p-type conducting ZnO: fabrication and characterisation
  78. Growth and characterization of thin films of ZnO by Atomic Layer Epitaxy
  79. Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures
  80. Bowing of epitaxial structures grown on bulk GaN substrates
  81. Interaction of Mn and Ti atoms with GaN surface - a resonant photoemission study
  82. MBE growth and characterization of InAs/GaAs for infrared detectors
  83. Defects in GaMnAs - influence of annealing and growth conditions
  84. Evidence of threading and misfit dislocations in partially relaxed InGaAs/GaAs heterostructures
  85. Use of element selective methods for characterization of thin films
  86. Photoemission study of the LT-GaAs
  87. Influence of substrate miscut angle on dislocation density in GaAs/Si heterostructures obtained by HRXRD
  88. Study of Long-Term Stability of Ohmic Contacts to GaN
  89. Cathodoluminescence study of n-type doped GaN epilayers and GaN/InGaN quantum well structures
  90. High-pressure phase transition and compressibility of zinc-blende HgZnSe mixed crystals
  91. Structure characterisation of MBE-grown ZnSe:Cr layers
  92. Gallium nitride surface formation and modification by Mn deposition - photoemission studies with use of synchrotron radiation
  93. Luminescent properties of wide bandgap materials at room temperature
  94. Lattice parameters changes of GaMnAs layers induced by annealing
  95. Structural and optical properties of high temperature and high pressure treated Si:H,D
  96. Nanostructure of laser annealed Ge-implanted near-surface Si layers
  97. Microstructure of high temperature - pressure treated nitrogen doped Si determined by TEM, PL and X-Ray methods
  98. Defect structure of Sn-implanted Si crystal annealed by nanosecond laser pulse
  99. Thermoelectric power of Czochralski silicon containing electrically active oxygen nanoclusters
  100. Effect of the DAC treatment on the nanomaterials of type Si-O

Presentation: Poster at E-MRS Fall Meeting 2007, Symposium H, by Przemysław Romanowski
See On-line Journal of E-MRS Fall Meeting 2007

Submitted: 2007-05-14 15:42
Revised:   2009-06-07 00:44
Google
 
Web science24.com
© 1998-2018 pielaszek research, all rights reserved Powered by the Conference Engine