Luminescent properties of wide bandgap materials at room temperature

Aleksandra Sokolowska 3,  Aleksander Werbowy 5,  Adam Barcz 2,  Marek Godlewski 2,4,  Jan Szmidt 5,  A. Olszyna 1

1. Warsaw University of Technology, Faculty of Materials Science and Engineering (InMat), Wołoska 141, Warszawa 02-507, Poland
2. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
3. Technical University of Łódź, Institute of Materials Engineering, Stefanowskiego 1/15, Łódź 90-924, Poland
4. Cardinal Stefan Wyszynski University, College of Science, Warszawa, Poland
5. Warsaw University of Technology, Institute of Microelectronics & Optoelectronics (imio), Koszykowa 75, Warszawa 00-662, Poland

Abstract
Investigated nanocrystalline (grain size < 100 nm) submicron thick GaN, AlN and BN layers were produced on Si substrates by means of reactive crystallization from impulse plasma (RPP CVD method), while diamond-like carbon (DLC) films were obtained in the course of radio frequency (13.56 MHz) chemical vapor deposition (RF CVD) process. In our previous works (e.g. [1-3]) we presented results of the studies of their optical (refractive index value, absorption edge value), electronic (resistivity, dielectric constant, state of the substrate/layer interface) as well as low-temperature photoluminescent properties [4]. Attempts of correlating structural, optical and electronic properties of discussed films with their photoluminescent characteristics were also undertaken.
In the present study we investigated photoluminescence (PL) of the layers excited by He-Cd laser (325 nm) beam at the room temperature. All materials, except BN, demonstrated PL in UV and violet light (fairly homogenous in plane in the case of GaN and AlN). Relatively the most intensive emission was observed for DLC and AlN films. Moreover, the subject of investigations was also cathodoluminescence (CL) of GaN and AlN layers. Both showed very broad-band emission, fairly homogenous in plane. An attempt of correlating luminescent properties of studied materials at room temperature with their bandgap widths and nanocrystallinity is presented as well.


References

[1] A.Werbowy, J.Szmidt, A.Sokolowska, A.Olszyna, Diamond Relat. Mater., 9(1998)609.
[2] A.Werbowy, J.Szmidt, A.Sokolowska, Ceramics: Getting into the 2000s - Part E, P.Vincenzini (ed.), Faenza, 1999, p.85.
[3] A.Werbowy, P.Firek, J.Szmidt, A.Olszyna, M.Galazka, J. Wide Bandgap Mater., 9(2002)169.
[4] J.Siwiec, A.Sokolowska, A.Olszyna, R.Dwilinski, M.Kaminska, J.Konwerska-Hrabowska, NanoStructured Mater., 10(1998)625.
Presentation: oral at E-MRS Fall Meeting 2003, Symposium A, by Aleksandra Sokolowska
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-15 18:50
Revised:   2003-05-26 14:15
Related papers
  1. Effect of annealing on the structure and microstructure of Pr doped ZrO_{2}-Y_{2}O_{3} nanocrystals
  2. Measurements of strain in ceramic components using magnetostrictive delay line
  3. Synthesis of doped ZnO nanopowders in microwave hydrothermal reactors
  4. Synthesis of Al doped ZnO nanopowders and their enhanced luminescence
  5. How we can stimulate intra-shell emissions of rare earth and transition metal ions in thin films and in nanoparticles
  6. Structure of Si:Mn annealed under enhanced stress conditions
  7. ZnO thin films for organic/inorganic heterojunctions
  8. Combining microwave and pressure techniques for hydrothermal synthesis of ZnO and ZrO_{2} nanopowders doped with a range of metal ions
  9. Luminescence properties of zinc oxide nanopowders doped with Al ions obtained by the hydrothermal and vapour condensation methods.
  10. Nanostructured Carbon Electrodes For Oxygen Reduction Catalyzed By Laccase Without any Mediators
  11. Reconstruction of lattice structure of ion-implanted near-surface regions of HgCdTe epitaxial layers
  12. Effect of high pressure annealing on defect structure of GaMnAs
  13. Wide band-gap II-VI semiconductors for optoelectronic applications
  14. Low temperature ZnMnO by ALD
  15. ZnMnO Films grown by Atomic Layer Deposition with uniform Mn distribution
  16. Effect of annealing on electrical properties of low temperature ZnO films
  17. Effect of stress on structural transformations in GaMnAs
  18. Secondary Ion Mass Spectroscopic Study of Mn-Implanted Silicon after Thermal Annealing
  19. Structure and Magnetization of Defect-Associated Sites in Silicon
  20. Stress - mediated solid phase epitaxial re - growth of a-Si at annealing of Si:Mn
  21. Doping of ZnO nanopowders with Mn, Ni and Cr In an ultrasound and microwave driver hydrothermal reaction
  22. The role of radiation defects in HgCdTe epitaxial growth
  23. Time-resolved ODMR investigations of II-VI based DMS heterostructures
  24. Method of Manganese co-doping of LT ZnO films
  25. Photoluminescence of ZnO films studied by femptosecond sapphire:Ti laser
  26. Optical properties of p-type ZnO:(N, As, Sb)
  27. Two color spectroscopy of ZnSe:Cr
  28. Photo-EPR studies of charge tunneling processes in Cd_{x}Zn_{(1-x)}Se:Fe,Cr (0 ≤ x ≤ 0.3) crystals
  29. Luminescence of CdMnTe Crystals in Magnetic Field
  30. Luminescence of doped nanoparticles of wide band gap II-VI compounds
  31. Doping of ZnO nanopowders with Mn and Cr in an ultrasound and microwave driven hydrothermal reaction
  32. Diffusion of Mn in gallium arsenide.
  33. ELECTRICAL AND OPTICAL PROPERTIES OF ZnO AND ZnO:Cr CRYSTALS, GROWN BY CVT METHOD
  34. TaSiN, TiSiN and TiWN diffusion barriers for metallization systems to GaN
  35. Transparent Conducting Oxides as Ohmic Contacts for GaSb-based Thermophotovoltaic Cells
  36. Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMT
  37. p-type conducting ZnO: fabrication and characterisation
  38. Growth and characterization of thin films of ZnO by Atomic Layer Epitaxy
  39. Dynamics of spin interactions in II-Mn-VI semiconductors studied with time-resolved optically detected magnetic resonance
  40. Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures
  41. Fe photoionization transition in ZnSSe:Fe crystals - photo-ESR studies
  42. Study of Long-Term Stability of Ohmic Contacts to GaN
  43. In-depth and in-plane profiling of InGaN-based laser diodes and heterostructures
  44. Cathodoluminescence study of n-type doped GaN epilayers and GaN/InGaN quantum well structures
  45. Compensation mechanisms in magnesium doped GaN
  46. Optical and magnetic resonance investigations of ZnO crystals doped with transition metal ions
  47. Optical and ODMR study of GaN-based HEMT structures
  48. Photo-ESR and optical studies of Cr photoionization transition in CdZnSe:Cr crystals
Google
 
Web science24.com
© 1998-2008 pielaszek research, all rights reserved Powered by the Conference Engine