Luminescent properties of wide bandgap materials at room temperature
|Aleksandra Sokolowska 3, Aleksander Werbowy 4, Adam Barcz 2, Marek Godlewski 2,5, Jan Szmidt 4, A. Olszyna 1|
1. Warsaw University of Technology, Faculty of Materials Science and Engineering (InMat), Wołoska 141, Warszawa 02-507, Poland
Investigated nanocrystalline (grain size < 100 nm) submicron thick GaN, AlN and BN layers were produced on Si substrates by means of reactive crystallization from impulse plasma (RPP CVD method), while diamond-like carbon (DLC) films were obtained in the course of radio frequency (13.56 MHz) chemical vapor deposition (RF CVD) process. In our previous works (e.g. [1-3]) we presented results of the studies of their optical (refractive index value, absorption edge value), electronic (resistivity, dielectric constant, state of the substrate/layer interface) as well as low-temperature photoluminescent properties . Attempts of correlating structural, optical and electronic properties of discussed films with their photoluminescent characteristics were also undertaken.
Presentation: oral at E-MRS Fall Meeting 2003, Symposium A, by Aleksandra Sokolowska
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-15 18:50 Revised: 2009-06-08 12:55