Luminescent properties of wide bandgap materials at room temperature

Aleksandra Sokolowska 3Aleksander Werbowy 4Adam Barcz 2Marek Godlewski 2,5Jan Szmidt 4A. Olszyna 1

1. Warsaw University of Technology, Faculty of Materials Science and Engineering (InMat), Wołoska 141, Warszawa 02-507, Poland
2. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
3. Technical University of Łódź, Institute of Materials Engineering, Stefanowskiego 1/15, Łódź 90-924, Poland
4. Warsaw University of Technology, Institute of Microelectronics & Optoelectronics (imio), Koszykowa 75, Warszawa 00-662, Poland
5. Cardinal Stefan Wyszynski University, College of Science, Warszawa, Poland

Abstract

Investigated nanocrystalline (grain size < 100 nm) submicron thick GaN, AlN and BN layers were produced on Si substrates by means of reactive crystallization from impulse plasma (RPP CVD method), while diamond-like carbon (DLC) films were obtained in the course of radio frequency (13.56 MHz) chemical vapor deposition (RF CVD) process. In our previous works (e.g. [1-3]) we presented results of the studies of their optical (refractive index value, absorption edge value), electronic (resistivity, dielectric constant, state of the substrate/layer interface) as well as low-temperature photoluminescent properties [4]. Attempts of correlating structural, optical and electronic properties of discussed films with their photoluminescent characteristics were also undertaken.
In the present study we investigated photoluminescence (PL) of the layers excited by He-Cd laser (325 nm) beam at the room temperature. All materials, except BN, demonstrated PL in UV and violet light (fairly homogenous in plane in the case of GaN and AlN). Relatively the most intensive emission was observed for DLC and AlN films. Moreover, the subject of investigations was also cathodoluminescence (CL) of GaN and AlN layers. Both showed very broad-band emission, fairly homogenous in plane. An attempt of correlating luminescent properties of studied materials at room temperature with their bandgap widths and nanocrystallinity is presented as well.


References

[1] A.Werbowy, J.Szmidt, A.Sokolowska, A.Olszyna, Diamond Relat. Mater., 9(1998)609.
[2] A.Werbowy, J.Szmidt, A.Sokolowska, Ceramics: Getting into the 2000s - Part E, P.Vincenzini (ed.), Faenza, 1999, p.85.
[3] A.Werbowy, P.Firek, J.Szmidt, A.Olszyna, M.Galazka, J. Wide Bandgap Mater., 9(2002)169.
[4] J.Siwiec, A.Sokolowska, A.Olszyna, R.Dwilinski, M.Kaminska, J.Konwerska-Hrabowska, NanoStructured Mater., 10(1998)625.

 

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Presentation: oral at E-MRS Fall Meeting 2003, Symposium A, by Aleksandra Sokolowska
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-05-15 18:50
Revised:   2009-06-08 12:55