Jadwiga Bak-Misiuk

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Affiliation:

Polish Academy of Sciences, Institute of Physics

address: al. Lotników 32/46, Warszawa, 02-668, Poland
phone: +48-22-8436601
fax: +48-22-8430926
web: http://www.ifpan.edu.pl

Participant:

E-MRS Fall Meeting 2003

began: 2003-09-15
ended: 2003-09-11
Presented:
E-MRS Fall Meeting 2003
Structural and optical properties of high temperature and high pressure treated Si:H,D

Publications:
  1. Defects in GaMnAs - influence of annealing and growth conditions
  2. Effect of high pressure annealing on defect structure of GaMnAs
  3. Effect of stress on structural transformations in GaMnAs
  4. Effect of the Annealing Atmosphere on the Quality of ZnO Crystal Surface
  5. Influence of substrate miscut angle on dislocation density in GaAs/Si heterostructures obtained by HRXRD
  6. Lattice parameters changes of GaMnAs layers induced by annealing
  7. MBE growth and characterization of InAs/GaAs for infrared detectors
  8. Microstructure of high temperature - pressure treated nitrogen doped Si determined by TEM, PL and X-Ray methods

  9. Buried nano-structured layers in high temperature-pressure treated Cz-Si:He

  10. Influence of enhanced temperature and pressure on structural transformations in pre-annealed Cz-Si

  11. Structure and related properties of Si:Mn annealed under enhanced hydrostatic pressure

  12. Stress - mediated solid phase epitaxial re - growth of a-Si at annealing of Si:Mn
  13. Structural and optical properties of high temperature and high pressure treated Si:H,D
  14. Structure of Si:Mn annealed under enhanced stress conditions
  15. Structure properties of bulk ZnO crystals



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