It has been presented the results of AFM, SEM, X-ray and SIMS studies of near-surface regions of HgCdTe graded-gap epitaxial layers obtained by high-temperature annealing of them in the vapour of the main components. We used grown on CdTe substrates the ISOVPE layers of HgCdTe whose surface was implanted by arsenic ions. The AFM investigation has showed that the morphology of surfaces of HgCdTe structures obtained at the same conditions is significantly influenced by the crystal orientation of the initial substrates of CdTe. By means of SIMS and SЕМ analysises it has been observed a substantial increase of the molar content of HgCdTe solid solution on the surface of ion-implanted epitaxial layers after high-temperature annealing. For X-ray investigation we used the technique of two-crystal spectrometry at skew-asymmetrical setup of the sample under study. On the basis of the observed structural changes taking place at different angles of azimuth scanning it has been made comparison of the calculated profiles of deformations and the experimental SIMS distribution of the main components of HgCdTe solid solution in the near-surface regions of the structure. Large gradients of composition HgCdTe solid solution have been shown to be formed in the near-surface regions of the epitaxial layers due to small changes in the thermodynamically equilibrium conditions of the process of high-temperature annealing. These gradients are the cause of formation of graded-band-gap structure in which strains of lattice crystal are present. The influence of these factors on the diffusion of an electrically active impurity is analyzed.

1. Structure of Si:Mn annealed under enhanced stress conditions
2. Skew asymmetric arrangement of X-ray diffraction for structural diagnostics of multi-layer semiconductor materials
3. Characterization and properties of a modified NiTi shape memory alloy by N^{+} ion implantation.
4. Microstructure changes in two phase β+γ Co-Ni-Al ferromagnetic shape memory alloys in relation to Al/Co ratio
5. Effect of high pressure annealing on defect structure of GaMnAs
6. HRTEM and TEM studies of amorphous structures in ZrNiTiCu base alloys obtained by rapid solidification or ball milling
7. Powder metallurgy technology of NiTi shape memory alloy
8. Effect of stress on structural transformations in GaMnAs
9. Secondary Ion Mass Spectroscopic Study of Mn-Implanted Silicon after Thermal Annealing
10. Structure and Magnetization of Defect-Associated Sites in Silicon
11. Stress - mediated solid phase epitaxial re - growth of a-Si at annealing of Si:Mn
12. The role of radiation defects in HgCdTe epitaxial growth
13. Interface dynamics of melt instabilities on semiconductor surfaces
14. Search for New Metallic Glass Compositions in NiZrTi Base Alloys Near Multicomponent Eutectic Positions
15. Optical properties of p-type ZnO:(N, As, Sb)
16. Diffusion of Mn in gallium arsenide.
17. HgCdMnZnTe: growth and physical properties
18. ELECTRICAL AND OPTICAL PROPERTIES OF ZnO AND ZnO:Cr CRYSTALS, GROWN BY CVT METHOD
19. TaSiN, TiSiN and TiWN diffusion barriers for metallization systems to GaN
20. Transparent Conducting Oxides as Ohmic Contacts for GaSb-based Thermophotovoltaic Cells
21. Structure and mechanical properties of ball milled TiAl-Cr intermetallics consolidated by hot pressing and pulse plasma sintering
22. Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMT
23. p-type conducting ZnO: fabrication and characterisation
24. Study of Long-Term Stability of Ohmic Contacts to GaN
25. X-Ray diffraction studies of radiation defects in CdTe single crystals and epitaxial layers
26. Nanocrystalline TiAl-V intermetallics hot pressed from mechanically alloyed powders
27. Luminescent properties of wide bandgap materials at room temperature