Adam Barcz

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Affiliation:


Institute of Electron Technology

address: al. Lotników 32/46, Warszawa, 02-668, Poland
phone: (4822)5487792
fax: (4822)8470631
web: http://www.neti.ite.waw.pl

Affiliation:


Polish Academy of Sciences, Institute of Physics

address: al. Lotników 32/46, Warszawa, 02-668, Poland
phone: +48-22-8436601
fax: +48-22-8430926
web: http://www.ifpan.edu.pl

Publications:


  1. Effect of Ca&P ions implantation on the corrosion resistance and biocompatibility of titanium
  2. Effect of high pressure annealing on defect structure of GaMnAs
  3. Effect of stress on structural transformations in GaMnAs
  4. ELECTRICAL AND OPTICAL PROPERTIES OF ZnO AND ZnO:Cr CRYSTALS, GROWN BY CVT METHOD
  5. Luminescent properties of wide bandgap materials at room temperature
  6. Optical properties of p-type ZnO:(N, As, Sb)
  7. Diffusion of Mn in gallium arsenide.

  8. p-type conducting ZnO: fabrication and characterisation
  9. Reconstruction of lattice structure of ion-implanted near-surface regions of HgCdTe epitaxial layers
  10. Secondary Ion Mass Spectroscopic Study of Mn-Implanted Silicon after Thermal Annealing
  11. Stress - mediated solid phase epitaxial re - growth of a-Si at annealing of Si:Mn
  12. Structure and Magnetization of Defect-Associated Sites in Silicon
  13. Structure of Si:Mn annealed under enhanced stress conditions
  14. Study of Long-Term Stability of Ohmic Contacts to GaN
  15. TaSiN, TiSiN and TiWN diffusion barriers for metallization systems to GaN
  16. Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMT
  17. The role of radiation defects in HgCdTe epitaxial growth
  18. Transparent Conducting Oxides as Ohmic Contacts for GaSb-based Thermophotovoltaic Cells



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