The role of radiation defects in HgCdTe epitaxial growth

Igor M. Fodchuk 3,  Ruslan M. Zaplitnyy 3,  Oleksandr Y. Bonchyk 4,  Andrij P. Vlasov 1,  Adam Barcz 5,2,  Zbignew T. Swiatek 6,  Lidia Lityńska-Dobrzyńska 6,  Pawel S. Zieba 6,  Elzbieta Bielanska 6,  Jan Guspiel 6

1. Ivan Franko National University, 50 Dragomanov Str., Lviv, Ukraine
2. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
3. Chernivtsi National University (ChNU), 2 Kotsubinsky Str., Chernivtsi 58012, Ukraine
4. Institute of Applied Problems of Mechanics and Mathematics (IAPMM), 3B Naukova Str., Lviv 79060, Ukraine
5. Institute of Electron Technology (ITE), al. Lotników 32/46, Warszawa 02-668, Poland
6. Polish Academy of Sciences, Institute of Metallurgy and Materials Sciences (IMIM PAN), Reymonta 25, Kraków 30-059, Poland

Abstract

X-ray diffraction methods as well as transmission electron microscopy were used to study the controlled doping and structural homogeneity of CdxHg1-xTe epitaxial layers. The investigated layers were obtained by the evaporation-condensation-diffusion (ECD) method in the process of isothermal growth. Two types of substrates for CdxHg1-xTe ECD growth were used: (110) and (111) CdTe monocrystals with As ion implanted surface layer at dose <5×1015 cm2 and 100 keV energy. Structural changes in damaged areas of CdTe crystals that arise at the ion beam implantation as well the influence of radiation defects on the dopant diffusion process and quality of obtained layers are analyzed.

Presentation: Poster at E-MRS Fall Meeting 2006, Symposium F, by Lidia Lityńska-Dobrzyńska
See On-line Journal of E-MRS Fall Meeting 2006
Submitted: 2006-05-23 09:34
Revised:   2006-05-24 10:39
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