dr Janusz Sadowski

e-mail:
phone: +46-46-2221490
fax: +46-46-2224710
web:
interest(s):

Affiliation:


Polish Academy of Sciences, Institute of Physics

address: al. Lotników 32/46, Warszawa, 02-668, Poland
phone: +48-22-8436601
fax: +48-22-8430926
web: http://www.ifpan.edu.pl

Affiliation:


University of Copenhagen

address: Universitetsparken 5, Copenhagen, DK-2100, Denmark
phone:
fax:
web:

Affiliation:


Chalmers University of Technology

address: , Göteborg, S-412 96, Sweden
phone:
fax:
web:

Affiliation:


Lund University, MAX-lab

address: , Lund, SE-221 00, Sweden
phone:
fax:
web:

Participant:


E-MRS Fall Meeting 2003

began: 2003-09-15
ended: 2003-09-11
Presented:

E-MRS Fall Meeting 2003

Defects in GaMnAs - influence of annealing and growth conditions

Participant:


E-MRS Fall Meeting 2006

began: 2006-09-04
ended: 2006-09-08
Presented:

E-MRS Fall Meeting 2006

Formation of epitaxial MnSb and MnBi layers on GaMnAs

E-MRS Fall Meeting 2006

Magnetotransport properties of ultrathin GaMnAs layers

Publications:


  1. Catalytic growth by molecular beam epitaxy and properties of ZnTe-based semiconductor nanowires
  2. Defects in GaMnAs - influence of annealing and growth conditions
  3. Effect of high pressure annealing on defect structure of GaMnAs
  4. Effect of stress on structural transformations in GaMnAs
  5. Electronic structure of Mn atoms in (Ga,Mn)As layers modified by high temperature annealing
  6. Formation of epitaxial MnSb and MnBi layers on GaMnAs
  7. Gallium nitride surface formation and modification by Mn deposition - photoemission studies with use of synchrotron radiation
  8. Influence of high temperature annealing on the local atomic structure around Mn atoms and magnetic properties of (Ga,Mn)As layers
  9. Lattice parameters changes of GaMnAs layers induced by annealing
  10. Magnetotransport properties of ultrathin GaMnAs layers
  11. Giant planar Hall effect in ferromagnetic (Ga,Mn)As layers

  12. Photoemission study of the LT-GaAs
  13. Magneto-conductance through nanoconstriction in ferromagnetic (Ga,Mn)As film

  14. Tunneling Anisotropic Magnetoresistance effect in p+-(Ga,Mn)As/n+-GaAs Esaki diode structure.



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