dr Janusz Sadowski

e-mail:
fax: +46-46-2224710
web:
interest(s):

Affiliation:


Polish Academy of Sciences, Institute of Physics

address: al. Lotników 32/46, Warszawa, 02-668, Poland
phone: +48-22-8436601
fax: +48-22-8430926
web: http://www.ifpan.edu.pl

Affiliation:


Lund University, MAX-lab

address: , Lund, SE-221 00, Sweden
phone:
fax:
web:

Participant:


E-MRS Fall Meeting 2003

began: 2003-09-15
ended: 2003-09-11
Presented:

E-MRS Fall Meeting 2003

Defects in GaMnAs - influence of annealing and growth conditions

Participant:


E-MRS Fall Meeting 2006

began: 2006-09-04
ended: 2006-09-08
Presented:

E-MRS Fall Meeting 2006

Formation of epitaxial MnSb and MnBi layers on GaMnAs

E-MRS Fall Meeting 2006

Magnetotransport properties of ultrathin GaMnAs layers

Participant:


17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

began: 2013-08-11
ended: 2013-08-16
Presented:

17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Quaternary (Ga,Mn)BiAs ferromagnetic semiconductor -MBE growth, structural and magnetic properties

Publications:


  1. Can we control the process of room temperature ferromagnetic clusters formation in GaMnAs matrix?
  2. Catalytic growth by molecular beam epitaxy and properties of ZnTe-based semiconductor nanowires
  3. Critical exponents of dilute ferromagnetic semiconductors (Ga,Mn)N and (Ga,Mn)As
  4. Defects in GaMnAs - influence of annealing and growth conditions
  5. Effect of high pressure annealing on defect structure of GaMnAs
  6. Effect of stress on structural transformations in GaMnAs
  7. Electronic structure of Mn atoms in (Ga,Mn)As layers modified by high temperature annealing
  8. Formation of epitaxial MnSb and MnBi layers on GaMnAs
  9. Gallium nitride surface formation and modification by Mn deposition - photoemission studies with use of synchrotron radiation
  10. Influence of high temperature annealing on the local atomic structure around Mn atoms and magnetic properties of (Ga,Mn)As layers
  11. Lattice parameters changes of GaMnAs layers induced by annealing
  12. Magnetotransport properties of ultrathin GaMnAs layers
  13. MBE growth, structural, magnetic, and electric properties of (In,Ga)As-(Ga,Mn)As core-shell nanowires
  14. Optical properties of GaAs:Mn nanowires
  15. Giant planar Hall effect in ferromagnetic (Ga,Mn)As layers

  16. Photoemission study of the LT-GaAs
  17. Photoreflectance study of Ga(Bi,As) and (Ga,Mn)As epitaxial layers grown under tensile and compressive strain
  18. Magneto-conductance through nanoconstriction in ferromagnetic (Ga,Mn)As film

  19. Quaternary (Ga,Mn)BiAs ferromagnetic semiconductor -MBE growth, structural and magnetic properties
  20. Stany Mn 3d w paśmie walencyjnym Ga1-xMnxSb
  21. Structural transformations of GaMnAs layer annealed under enhanced hydrostatic pressure
  22. Tunneling Anisotropic Magnetoresistance effect in p+-(Ga,Mn)As/n+-GaAs Esaki diode structure.



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