TaSiN, TiSiN and TiWN diffusion barriers for metallization systems to GaN
|Anna Piotrowska 1, Eliana Kaminska 1, Andrian V. Kuchuk 1, Krystyna Golaszewska 1, Michal Wiatroszak 1, Radoslaw Lukasiewicz 1, Tadeusz T. Piotrowski 1, Jerzy Katcki 1, Jacek Ratajczak 1, Adam Barcz 1, Rafał Jakieła 4, Andrzej Turos 3,4, Anna Stonert 3, Jens Dennemarck 2, S. Figge 2, T. Bottcher 2, Detlef Hommel 2|
1. Institute of Electron Technology (ITE), al. Lotników 32/46, Warszawa 02-668, Poland
The wide band-gap nitrides are ideally suited for high-speed high-temperature applications. The field of nitride processing technology is still very much in its infancy and a large number of novel process steps are being investigated. In particular, successful development of such devices requires reliable contact technology.
Presentation: poster at E-MRS Fall Meeting 2004, Symposium C, by Eliana Kaminska
See On-line Journal of E-MRS Fall Meeting 2004
Submitted: 2004-05-21 11:05 Revised: 2009-06-08 12:55
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