science24.com - Andrzej Misiuk

prof Andrzej Misiuk

e-mail:
phone:	+48-22-5487792
fax:	+48-22-8470631
web:
interest(s):	microdefects formed in semiconductors subjected to high temperature-pressure treatment

Affiliation:

Institute of Electron Technology

address:	al. Lotników 32/46, Warszawa, 02-668, Poland
phone:	(4822)5487792
fax:	(4822)8470631
web:	http://www.neti.ite.waw.pl

Participant:

High Pressure School 2001 (4th)

began:	2001-06-22
ended:	2001-06-25
Presented:

Participant:

E-MRS Fall Meeting 2003

began:	2003-09-15
ended:	2003-09-11
Presented:

E-MRS Fall Meeting 2003	Thermoelectric power of Czochralski silicon containing electrically active oxygen nanoclusters

Participant:

E-MRS Fall Meeting 2005

began:	2005-09-05
ended:	2005-09-09
Presented:

E-MRS Fall Meeting 2005	Structure and related properties of Si:Mn annealed under enhanced hydrostatic pressure
E-MRS Fall Meeting 2005	Buried nano-structured layers in high temperature-pressure treated Cz-Si:He

Participant:

Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

began:	2007-05-20
ended:	2007-05-24
Presented:

Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth	Stress - mediated solid phase epitaxial re - growth of a-Si at annealing of Si:Mn

Participant:

E-MRS Fall Meeting 2007

began:	2007-09-17
ended:	2007-11-30
Presented:

Publications:

Effect of high pressure annealing on defect structure of GaMnAs
Effect of stress on structural transformations in GaMnAs
Effect of the DAC treatment on the nanomaterials of type Si-O
Influence of substrate miscut angle on dislocation density in GaAs/Si heterostructures obtained by HRXRD
Microstructure of high temperature - pressure treated nitrogen doped Si determined by TEM, PL and X-Ray methods
Observation of defects in g - irradiated Cz-si annealed under high pressure
Optical and Spectroscopy of nanosized system on Si base after implantation and thermal treatment under enhanced hydrostatic pressure
Buried nano-structured layers in high temperature-pressure treated Cz-Si:He
Defect structure of silicon crystals implanted with nitrogen - a study of Si:N annealed under high hydrostatic pressure.
Influence of enhanced temperature and pressure on structural transformations in pre-annealed Cz-Si
Pressure- assistance lateral nanostructuring of the epitaxial silicon layers with SeGe quantum wells
Structure and related properties of Si:Mn annealed under enhanced hydrostatic pressure
Secondary Ion Mass Spectroscopic Study of Mn-Implanted Silicon after Thermal Annealing
Spectroscopy of Cz-Si samples subjected to implantation and thermal treatment under enhanced hydrostatic pressure.
Stress - mediated solid phase epitaxial re - growth of a-Si at annealing of Si:Mn
Structural and optical properties of high temperature and high pressure treated Si:H,D
Structure and Magnetization of Defect-Associated Sites in Silicon
Structure of Si:Mn annealed under enhanced stress conditions
Substructure of the metal nanomaterials after the intensive external influence
Thermoelectric power of Czochralski silicon containing electrically active oxygen nanoclusters