prof Andrzej Misiuk

e-mail:
fax: +48-22-8470631
web:
interest(s): microdefects formed in semiconductors subjected to high temperature-pressure treatment

Affiliation:


Institute of Electron Technology

address: al. Lotników 32/46, Warszawa, 02-668, Poland
phone: (4822)5487792
fax: (4822)8470631
web: http://www.neti.ite.waw.pl

Participant:


High Pressure School 2001 (4th)

began: 2001-06-22
ended: 2001-06-25
Presented:

Participant:


E-MRS Fall Meeting 2003

began: 2003-09-15
ended: 2003-09-11
Presented:

E-MRS Fall Meeting 2003

Thermoelectric power of Czochralski silicon containing electrically active oxygen nanoclusters

Participant:


E-MRS Fall Meeting 2005

began: 2005-09-05
ended: 2005-09-09
Presented:

E-MRS Fall Meeting 2005

Structure and related properties of Si:Mn annealed under enhanced hydrostatic pressure


E-MRS Fall Meeting 2005

Buried nano-structured layers in high temperature-pressure treated Cz-Si:He


Participant:


Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

began: 2007-05-20
ended: 2007-05-24
Presented:

Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

Stress - mediated solid phase epitaxial re - growth of a-Si at annealing of Si:Mn

Publications:


  1. Effect of high pressure annealing on defect structure of GaMnAs
  2. Effect of stress on structural transformations in GaMnAs
  3. Effect of the DAC treatment on the nanomaterials of type Si-O
  4. Influence of substrate miscut angle on dislocation density in GaAs/Si heterostructures obtained by HRXRD
  5. Microstructure of high temperature - pressure treated nitrogen doped Si determined by TEM, PL and X-Ray methods
  6. Microstructure of silicon implanted with transition metals
  7. Observation of defects in g - irradiated Cz-si annealed under high pressure
  8. Optical and Spectroscopy of nanosized system on Si base after implantation and thermal treatment under enhanced hydrostatic pressure
  9. Buried nano-structured layers in high temperature-pressure treated Cz-Si:He

  10. Defect structure of silicon crystals implanted with nitrogen - a study of Si:N annealed under high hydrostatic pressure.

  11. Influence of enhanced temperature and pressure on structural transformations in pre-annealed Cz-Si

  12. Pressure- assistance lateral nanostructuring of the epitaxial silicon layers with SeGe quantum wells

  13. Structure and related properties of Si:Mn annealed under enhanced hydrostatic pressure

  14. Secondary Ion Mass Spectroscopic Study of Mn-Implanted Silicon after Thermal Annealing
  15. Spectroscopy of Cz-Si samples subjected to implantation and thermal treatment under enhanced hydrostatic pressure.
  16. Stress - mediated solid phase epitaxial re - growth of a-Si at annealing of Si:Mn
  17. Structural and optical properties of high temperature and high pressure treated Si:H,D
  18. Structural transformations of GaMnAs layer annealed under enhanced hydrostatic pressure
  19. Structure and Magnetization of Defect-Associated Sites in Silicon
  20. Structure of Si:Mn annealed under enhanced stress conditions
  21. Substructure of the metal nanomaterials after the intensive external influence
  22. Thermoelectric power of Czochralski silicon containing electrically active oxygen nanoclusters



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