Structure and related properties of Si:Mn annealed under enhanced hydrostatic pressure

Andrzej Misiuk 1Artem Shalimov 3Jadwiga Bak-Misiuk 3Barbara Surma 1,2M. Prujszczyk 1Jacek Jagielski 2,4

1. Institute of Electron Technology (ITE), al. Lotników 32/46, Warszawa 02-668, Poland
2. Institute of Electronic Materials Technology (ITME), Wólczyńska 133, Warszawa 01-919, Poland
3. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
4. Andrzej Sołtan Institute for Nuclear Studies (IPJ), Świerk, Otwock-Świerk 05-400, Poland


Ferromagnetic ordering in silicon implanted with Mn+ ions, Si:Mn, has been reported recently; this ordering is evidently related to the structure of Mn-enriched near surface layer of implanted material [1]. As it has been stated earlier [2], not only temperature, HT, but also hydrostatic pressure, HP, applied at processing of implanted silicon affect its properties.
The effect of treatment at HT up to 1270 K under HP up to 1.1 GPa for time, t, up to 10 h on the structure and related properties of Si:Mn was investigated in present work by X-Ray, photoluminescence, and related methods.
Si:Mn was prepared by Mn+ implantation into 001 oriented oxygen-containing Si (Fz and Cz-grown) at 160 keV to a dose 1x10(16)(cm-2); temperature of the Si substrate, T, at implantation was kept at 340 K (AMn:Si)and at 610 K (BMn:Si).
Structural properties of Mn:Si are distinctly dependent on the implantation and treatment parameters. The structure of AMn:Si (T = 340 K) treated under HP at up to 1270 K for up to 5 h remains to be strongly disturbed; no magnetic ordering has been detected in AMn:Si if treated at 1070 K - 1.1 GPa for 1 h. Contrary, an annealing of this sample at 1070 K under atmospheric pressure produces well ordered structure. The BMn:Si samples prepared at T = 610 K and treated at atmospheric pressure as well as under HP were of improved crystalographic perfection; still in treated BSi:Mn some dislocations were detected.
The effects of T, HT, HP, and t on the structure and related properties of Si:Mn will be discussed.
1. M.Bolduc, C.Awo-Affouda, A.Stollenwerk, M.B.Huang, G.G.Ramos, G.Agnello, V.P.LaBella, Phys.Rev.B 71 (2005)033302.
2. A.Misiuk, A.Barcz, J.Ratajczak, L.Bryja, J.Mater.Sci.: Electronics, 14 (2003) 295.

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Presentation: oral at E-MRS Fall Meeting 2005, Symposium D, by Andrzej Misiuk
See On-line Journal of E-MRS Fall Meeting 2005

Submitted: 2005-05-28 07:05
Revised:   2009-06-07 00:44
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