Cathodoluminescence study of n-type doped GaN epilayers and GaN/InGaN quantum well structures

Marek Godlewski 2,5,  Elżbieta Lusakowska 2,  Ewa M. Goldys 4,  Matthew R. Phillips 3,  T. Bottcher 1,  S. Figge 1,  Detlef Hommel 1

1. University of Bremen, Institute of Solid State Physics, P.O. Box 330440, Bremen 28334, Germany
2. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
3. University of Technology (UTS), Broadway, Sydney 2007, Australia
4. Division of Information and Communication Sciences, Macquarie University, Sydney, Australia
5. Cardinal Stefan Wyszynski University, College of Science, Warszawa, Poland

Abstract

In this communication we discuss light emission properties of n-type doped GaN epilayers and InGaN/GaN quantum well structures. We evaluate the influence of n-type doping of these layers and structures and of the doping level on structural quality of the samples studied, the observed light emission intensity and in-plane emission instabilities. We confirm reported previously strong enhancement of light emission from doped samples and discuss possible mechanisms of the enhancement. Large- and small-scale light emission inhomogeneities are demonstrated based on the results of cathodoluminescence, scanning electron microscopy and micro-photoluminescence experiments. The present study indicates possibility of saturation of dislocations at high doping level or at large excitation density.


This work was partly supported by the grant numbers 5 P03B 007 20, 5 P03B 123 21 of KBN and by the DENIS program of European Union (G5RD-CT-2001-00566).

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Presentation: poster at E-MRS Fall Meeting 2003, Symposium A, by Marek Godlewski
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-05-27 15:43
Revised:   2003-05-27 15:44
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