Cathodoluminescence study of n-type doped GaN epilayers and GaN/InGaN quantum well structures
|Marek Godlewski 2,5, Elżbieta Lusakowska 2, Ewa M. Goldys 4, Matthew R. Phillips 3, T. Bottcher 1, S. Figge 1, Detlef Hommel 1|
1. University of Bremen, Institute of Solid State Physics, P.O. Box 330440, Bremen 28334, Germany
In this communication we discuss light emission properties of n-type doped GaN epilayers and InGaN/GaN quantum well structures. We evaluate the influence of n-type doping of these layers and structures and of the doping level on structural quality of the samples studied, the observed light emission intensity and in-plane emission instabilities. We confirm reported previously strong enhancement of light emission from doped samples and discuss possible mechanisms of the enhancement. Large- and small-scale light emission inhomogeneities are demonstrated based on the results of cathodoluminescence, scanning electron microscopy and micro-photoluminescence experiments. The present study indicates possibility of saturation of dislocations at high doping level or at large excitation density.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium A, by Marek Godlewski
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-27 15:43 Revised: 2013-02-28 15:04
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