Pressure- assistance lateral nanostructuring of the epitaxial silicon layers with SeGe quantum wells
|Irina V. Antonova 2, Mitrofan B. Gulyaev 2, Vladimir A. Skuratov 4, Andrzej Misiuk 1, Peter Zaumseill 3|
1. Institute of Electron Technology (ITE), al. Lotników 32/46, Warszawa 02-668, Poland
Nowadays epitaxial silicon layers with SiGe quantum wells are increasingly important due to possible new application in nano- and microelectronics. In such structures SiGe layers are under strong compressive stress and Si layers are under tensile stress depending on the Ge content. It is well known, that point defects and stress are two main factors effect on Ge and doping impurity redistribution in heterostructure. Diffusion coefficient of Ge into strained Si layer is increased in 2-3 orders of magnitude in comparison with that in fully relaxed Si . Low fluence high energy ion implantation (HEII) allows one to add a periodical lateral gradient of stress and defects in epitaxial layer. Moreover, HEII can cause formation of vertically ordering nanodots or nanoclustors  and can be used for development of methods of local diffusion of Ge or doping impurities in SiGe/Si heterostructures. In the present study the comparison of Ge redistribution in epitaxial SiGe/Si superlattice under annealing at different hydrostatic pressure and in the case of low dose HEII in superlattice with subsequent annealing at atmospheric pressure were made. Structures were characterized by capacitance-voltage measurements, secondary ions mass spectroscopy and atomic force microscopy. It was found that in the case of HEII the redistribution of impurities is drastically increased. Whereas uniform high pressure cause less pronounced effect. Details and mechanism of HEII and hydrostatic high pressure impact on impurity redistribution in epitaxial SiGe/Si superlattice are discussed in the report.
Presentation: poster at E-MRS Fall Meeting 2005, Symposium I, by Irina V. Antonova
See On-line Journal of E-MRS Fall Meeting 2005
Submitted: 2005-05-06 03:53 Revised: 2009-06-07 00:44
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