Elżbieta Lusakowska

Affiliation:

Polish Academy of Sciences, Institute of Physics

Publications:

1. Cathodoluminescence study of n-type doped GaN epilayers and GaN/InGaN quantum well structures
2. Defect structure of Sn-implanted Si crystal annealed by nanosecond laser pulse
3. Effect of high pressure annealing on defect structure of GaMnAs
4. Evidence of threading and misfit dislocations in partially relaxed InGaAs/GaAs heterostructures
5. Gallium nitride surface formation and modification by Mn deposition - photoemission studies with use of synchrotron radiation
6. Gd atoms on Si (111) surface – AFM and photoemission study
7. Growth and characterization of thin films of ZnO by Atomic Layer Epitaxy
8. Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures
9. Interaction of Mn and Ti atoms with GaN surface - a resonant photoemission study
10. Nanostructure of laser annealed Ge-implanted near-surface Si layers
11. Structure characterisation of MBE-grown ZnSe:Cr layers
12. Wide band-gap II-VI semiconductors for optoelectronic applications
13. ZnO thin films for organic/inorganic heterojunctions