Optical and Spectroscopy of nanosized system on Si base after implantation and thermal treatment under enhanced hydrostatic pressure

Andrzej Misiuk 1M. Prujszczyk 1Rostyslav V. Shalayev 2Evgeny Shemchenko 2Boris M. Efros 2Anatoly Prudnikov 2Alexander Yakovec 2

1. Institute of Electron Technology (ITE), al. Lotników 32/46, Warszawa 02-668, Poland
2. National Academy of Sciences of Ukraine, A.Galkin Donetsk Institute for Physics & Technology (DonPTI NASU), Roza Luxemburg 72, Donetsk 83114, Ukraine


Recent developments in the fields of integrated circuits, technology of CDs, and large volume information transmission resulted in still growing interest in optical and spectral properties of silicon - related materials, in particular produced basing on single crystalline Czochralski grown silicon, Cz - Si. Electronic states related to the presence of structural defects and impurities in Si:O,H,… - related materials [1] are still intensively investigated.

In the presented work, Si:O,H,… samples prepared by implantation technique, and processed at up to 1400 K (HT) under enhanced hydrostatic pressure in argon atmosphere (HP, up to 1.2 GPa) have been investigated. It has been shown that the HT - HP treatment of implanted samples leads to the formation of nano - clusters. The nano - sized structure formation in the samples results in essential changes of optical and spectral properties, being dependent on the HT - HP processing parameters.

The nature and mechanism of nano - sized structure formation in implanted single crystalline silicon, especially in Si:O and Si:H, subjected to complex processing [2, 3], and the effects of HT – HP treatment on spectral characteristics this materials are discussed. Usefulness of such materials for producing of sensors has been demonstrated.

  1. A. Misiuk, B.M. Efros. Pressure-induced transformations during annealing of silicon implanted with oxygen: Physics and Technology High Pressure, 16 (2006) 49.
  2. A.M. Prudnikov, A. Misiuk, I.E. Tyschenko, B.M. Efros. Solid state transitions investigations in DAC by spectroscopy methods: Defect and Diffusion Forum, 208-209 (2002) 315.
  3. W. Wieteska, W. Wierzchowski, W. Graeff, A. Misiuk, A. Barcz, L. Bryja, V.P. Popov: Acta Phys. Polon. A, 102 (2002) 239.

Related papers
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  5. Effect of high pressure annealing on defect structure of GaMnAs
  6. Observation of defects in g - irradiated Cz-si annealed under high pressure
  7. Effect of stress on structural transformations in GaMnAs
  8. Spectroscopy of Cz-Si samples subjected to implantation and thermal treatment under enhanced hydrostatic pressure.
  9. Secondary Ion Mass Spectroscopic Study of Mn-Implanted Silicon after Thermal Annealing
  10. Structure and Magnetization of Defect-Associated Sites in Silicon
  11. Stress - mediated solid phase epitaxial re - growth of a-Si at annealing of Si:Mn
  12. Structure and related properties of Si:Mn annealed under enhanced hydrostatic pressure
  13. Buried nano-structured layers in high temperature-pressure treated Cz-Si:He
  14. Defect structure of silicon crystals implanted with nitrogen - a study of Si:N annealed under high hydrostatic pressure.
  15. Influence of enhanced temperature and pressure on structural transformations in pre-annealed Cz-Si
  16. Pressure- assistance lateral nanostructuring of the epitaxial silicon layers with SeGe quantum wells
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  18. Structural and optical properties of high temperature and high pressure treated Si:H,D
  19. Microstructure of high temperature - pressure treated nitrogen doped Si determined by TEM, PL and X-Ray methods
  20. Thermoelectric power of Czochralski silicon containing electrically active oxygen nanoclusters
  21. Effect of the DAC treatment on the nanomaterials of type Si-O
  22. Solid State Transitions Investigations in DAC by Spectroscopy Methods

Presentation: Poster at E-MRS Fall Meeting 2007, Acta Materialia Gold Medal Workshop, by Rostyslav V. Shalayev
See On-line Journal of E-MRS Fall Meeting 2007

Submitted: 2007-05-14 07:32
Revised:   2009-06-07 00:44