Recently ferromagnetic hysteresis has been observed at room temperature in single crystalline silicon wafers implanted with Si or Ar ions, and also in silicon wafers irradiated with high flux of neutron beam [1]. The authors suggested that the paramagnetic defects created during implantation or irradiation maybe are among the factors responsible for the observed magnetic behavior. These results could also have important implications on the magnetic behaviors of metal implanted silicon wafers [2,3].

To better understand the mechanisms of the reported ferromagnetic hyseresis loop, we carry out high resolution transmission electron microscopic and magnetic study of Fz-Si and Cz-Si silicon wafers damaged, to produce different kinds of defects, by three different methods: (a) irradiation with 2.5 MeV electrons at a flux of 1×10¹⁷ cm^-2, (b) self-implantion with 150 keV Si⁺ ions at a flux of 2×10¹⁶ cm^-2, and (c) implantion with 20 keV He⁺ ions at an angle of 60° and at a flux of 1×10¹⁷ cm^-2. The results of these studies will be reported.

References

1. T. Dubruca, J. Hack, R.E. Hummel, and A. Angerhofer, Appl. Phys. Lett. 88, 182504 (2006).
2. M. Bolduc, C. Awo-Affouda, A. Stollenwerk, M.B. Huang, F. Ramos, G. Agnello, V. P. LaBella, Phys. Rev., B71, 033302 (2005).
3. P. R. Bandaru, J. Park, J. S. Lee, Y. J. Tang, L. H. Chen, S. Jin, S. A. Song, and J. R. O’Brien, Appl. Phys. Lett. 89, 112502 (2006).

1. Structure of Si:Mn annealed under enhanced stress conditions
2. Optical and Spectroscopy of nanosized system on Si base after implantation and thermal treatment under enhanced hydrostatic pressure
3. Substructure of the metal nanomaterials after the intensive external influence
4. Reconstruction of lattice structure of ion-implanted near-surface regions of HgCdTe epitaxial layers
5. Effect of high pressure annealing on defect structure of GaMnAs
6. Observation of defects in g - irradiated Cz-si annealed under high pressure
7. Effect of stress on structural transformations in GaMnAs
8. Spectroscopy of Cz-Si samples subjected to implantation and thermal treatment under enhanced hydrostatic pressure.
9. Secondary Ion Mass Spectroscopic Study of Mn-Implanted Silicon after Thermal Annealing
10. Stress - mediated solid phase epitaxial re - growth of a-Si at annealing of Si:Mn
11. The role of radiation defects in HgCdTe epitaxial growth
12. Optical properties of p-type ZnO:(N, As, Sb)
13. Diffusion of Mn in gallium arsenide.
14. Structure and related properties of Si:Mn annealed under enhanced hydrostatic pressure
15. Buried nano-structured layers in high temperature-pressure treated Cz-Si:He
16. Defect structure of silicon crystals implanted with nitrogen - a study of Si:N annealed under high hydrostatic pressure.
17. Influence of enhanced temperature and pressure on structural transformations in pre-annealed Cz-Si
18. Pressure- assistance lateral nanostructuring of the epitaxial silicon layers with SeGe quantum wells
19. ELECTRICAL AND OPTICAL PROPERTIES OF ZnO AND ZnO:Cr CRYSTALS, GROWN BY CVT METHOD
20. TaSiN, TiSiN and TiWN diffusion barriers for metallization systems to GaN
21. Transparent Conducting Oxides as Ohmic Contacts for GaSb-based Thermophotovoltaic Cells
22. Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMT
23. p-type conducting ZnO: fabrication and characterisation
24. Influence of substrate miscut angle on dislocation density in GaAs/Si heterostructures obtained by HRXRD
25. Study of Long-Term Stability of Ohmic Contacts to GaN
26. Luminescent properties of wide bandgap materials at room temperature
27. Structural and optical properties of high temperature and high pressure treated Si:H,D
28. Microstructure of high temperature - pressure treated nitrogen doped Si determined by TEM, PL and X-Ray methods
29. Thermoelectric power of Czochralski silicon containing electrically active oxygen nanoclusters
30. Nanostructured layers in high temperature-pressure treated silicon implanted with helium
31. Effect of the DAC treatment on the nanomaterials of type Si-O