Transparent Conducting Oxides as Ohmic Contacts for GaSb-based Thermophotovoltaic Cells
|Krystyna Golaszewska 1, Eliana Kaminska 1, Emil Kowalczyk 1, Renata Kruszka 1, Radoslaw Lukasiewicz 1, Ewa Papis 1, Anna Piotrowska 1, Tadeusz T. Piotrowski 1, Pawel Skoczylas 1, Adam Barcz 1,2, Rafał Jakieła 3|
1. Institute of Electron Technology (ITE), al. Lotników 32/46, Warszawa 02-668, Poland
Of the available materials for thermophotovoltaic cells, quaternary compounds of the GaSb family have the advantage of optimal band gap and excellent minority carrier transport in InGaAsSb/GaSb TPV diodes. To take full advantage of these devices high quality transparent ohmic contacts are required. At present the front contact metallization relies on the use of photolitographically patterned thin film metallic structures that introduce a shadowing loss. The use of transparent conducting oxides (TCOs) could potentially eliminate this loss. However, TCOs may introduce other losses due to electrical resistance.
Presentation: poster at E-MRS Fall Meeting 2004, Symposium A, by Eliana Kaminska
See On-line Journal of E-MRS Fall Meeting 2004
Submitted: 2004-05-21 14:16 Revised: 2009-06-08 12:55