Influence of high temperature annealing on the local atomic structure around Mn atoms and magnetic properties of (Ga,Mn)As layers
|Iraida N. Demchenko 1, Krystyna Lawniczak-Jablonska 1, Tomasz Story 1, Victor Osinniy 1, Rafał Jakieła 1, Jaroslaw Domagala 1, Janusz Sadowski 1,2,3,4, Marcin Klepka 1, Anna Wolska 1, Maryna Chernyshova 5|
1. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
In recent years a rapid development of the field of research called spintronics is observed. The goal of the studies is to create conceptually new devices which will utilize spin of electron. To achieve this goal it is necessary to fabricate effective injectors of polarized spins and to learn how to manipulate and detect spin polarization. On the other hand the integration of magnetic materials with conventional semiconductor technology should be also possible to achieve. All of these imply the fabrication of suitable materials with appropriate properties at room temperature and manufacturing the reliable spin based device.
Presentation: Poster at E-MRS Fall Meeting 2007, Symposium I, by Iraida N. Demchenko
See On-line Journal of E-MRS Fall Meeting 2007
Submitted: 2007-05-13 15:13 Revised: 2009-06-07 00:44
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