Stress - mediated solid phase epitaxial re - growth of a-Si at annealing of Si:Mn

Andrzej Misiuk 1Adam Barcz 1Artur Wnuk 2Jadwiga Bak-Misiuk 3

1. Institute of Electron Technology (ITE), al. Lotników 32/46, Warszawa 02-668, Poland
2. Institute of Electronic Materials Technology (ITME), Wólczyńska 133, Warszawa 01-919, Poland
3. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland


Ion-beam-induced formation of amorphous silicon (a-Si) and its solid phase epitaxial re-growth (SPER) during annealing of implanted single crystalline silicon (c-Si) have attracted significant interest because of their importance for fabrication of Si devices [1]. SPER of a-Si depends, among others parameters, on processing temperature (HT) and pressure (HP) [2].

The structures prepared by implantation of Cz-Si with some metallic ions and annealed under HP have been reported to indicate interesting magnetic properties, of possible application in spintronics [3 - 5]. The HT - HP treatment of Si implanted with manganese (Si:Mn) affects its microstructure and magnetic ordering in a specific way [3, 5]. This motivated us to perform detailed investigation of the effect of HP applied at annealing of Si:Mn on its properties, related to SPER of a-Si.

Mn+ ions were implanted at room temperature with doses, D = 2x1015 – 1.2x1016 cm-2 and energy, E = 160 keV, into (001) oriented p–type Czochralski grown silicon (Cz-Si). The Si:Mn samples were processed in Ar atmosphere for up to 10 h at up to 1400 K under HP up to 1.2 GPa. The depth distribution of Mn was investigated by Secondary Ions Mass Spectrometry (SIMS). Photoluminescence (PL) and X-Ray measurements were applied to determine the sample microstructure.

Mn+ implantation produces a-Si near the implanted ions range (Rp = 140 nm), up to about 0.25 mm depth. The PL spectra of as-implanted samples are featureless confirming complete amorphisation of the near – surface layer of Si:Mn.

SPER of a-Si is strongly dependent on implanted dose, on HT, processing time (t) and HP. Processing of the Si:Mn samples (D = 2x1015 cm-2) for t = 1 h at 870 - 1000 K, both under 105 Pa and 1.2 GPa, results in the sharp minimum in Mn concentration at ~ 150 nm depth below the surface. SPER results in the movement of the a-c interface towards the surface. Since the solubility of Mn in c-Si is low, this re-crystallization expels Mn atoms from the re-growth region and the a-c interface moves toward the surface. The excess Mn atoms are accumulated at the a-c interface and so, depending also on the D value, the Mn concentration reach to a point, at which re-crystallization can not push longer excess Mn out of c-Si.

In the case of processing at 1070 – 1170 K, the a-Si is converted in part into polycrystalline material (as confirmed by X-Ray and PL measurements) while manganese silicides (such as Mn4Si7 [6]) are formed.

In Si:Mn prepared by high dose implantation (D ³ 1x1016 cm-2) and processed at ³ 1170 K, the effective out-diffusion of Mn to the Si:Mn surface increases with uniform stress applied; SPER and the Mn distribution are strongly dependent on p and t.

Our results help in understanding the mechanisms of SPER and, in the particular case of Si:Mn, suggest a new route to prepare, by the appropriate HT – HP treatment, the specific Si-Mn materials belonging to the Diluted Magnetic Semiconductor family.

[1] L. Pelaz, L.A. Marguez, J. Barbolla, J. Appl. Phys., 96 (2004) 5947.

[2] A. Misiuk, B. Surma, J. Bak-Misiuk, Solid State Phen., 108-109 (2005) 351.

[3] A. Misiuk, J. Bak-Misiuk, B. Surma, W. Osinniy, M. Szot, T. Story, J. Jagielski, J. Alloys Comp., 423 (2006) 201.

[4] A. Misiuk, L. Chow, A. Barcz, B. Surma, J. Bak-Misiuk, P. Romanowski, W. Osinniy, F. Salman, G. Chai, M. Prujszczyk, A. Trojan, in: High Purity Silicon 9, Eds: C.L. Claeys, R. Falster, M. Watanabe, P. Stallhofer, ISBN 1-56677-504-3, 2006, p. 481.

[5] A. Misiuk, B. Surma, J. Bak-Misiuk, A. Barcz, W. Jung, W. Osinniy, A. Shalimov, Mater. Sci. Semicond. Process., 9 (2006) 270.

[6] U. Gottlieb, A. Sulpice, B. Lambert-Andron, O. Laborde, J. Alloys Comp. 361 (2003) 13.

Related papers
  1. Defect distribution along needle-shaped PrVO4 single crystals grown by the slow-cooling method
  2. Electronic and optical properties – As and As+Sb doped ZnO grown by PA-MBE
  3. Can we control the process of room temperature ferromagnetic clusters formation in GaMnAs matrix?
  4. Structural transformations of GaMnAs layer annealed under enhanced hydrostatic pressure
  5. Microstructure of silicon implanted with transition metals
  6. Structure of Si:Mn annealed under enhanced stress conditions
  7. Optical and Spectroscopy of nanosized system on Si base after implantation and thermal treatment under enhanced hydrostatic pressure
  8. Substructure of the metal nanomaterials after the intensive external influence
  9. Reconstruction of lattice structure of ion-implanted near-surface regions of HgCdTe epitaxial layers
  10. Effect of high pressure annealing on defect structure of GaMnAs
  11. Observation of defects in g - irradiated Cz-si annealed under high pressure
  12. Elecrical and optical studies of undoped GaP grown by LEC method
  13. Effect of stress on structural transformations in GaMnAs
  14. Spectroscopy of Cz-Si samples subjected to implantation and thermal treatment under enhanced hydrostatic pressure.
  15. Secondary Ion Mass Spectroscopic Study of Mn-Implanted Silicon after Thermal Annealing
  16. Structure and Magnetization of Defect-Associated Sites in Silicon
  17. The role of radiation defects in HgCdTe epitaxial growth
  18. Optical properties of p-type ZnO:(N, As, Sb)
  19. Effect of the Annealing Atmosphere on the Quality of ZnO Crystal Surface
  20. Structure properties of bulk ZnO crystals
  21. Diffusion of Mn in gallium arsenide.
  22. Structure and related properties of Si:Mn annealed under enhanced hydrostatic pressure
  23. Buried nano-structured layers in high temperature-pressure treated Cz-Si:He
  24. Defect structure of silicon crystals implanted with nitrogen - a study of Si:N annealed under high hydrostatic pressure.
  25. Influence of enhanced temperature and pressure on structural transformations in pre-annealed Cz-Si
  26. Pressure- assistance lateral nanostructuring of the epitaxial silicon layers with SeGe quantum wells
  28. TaSiN, TiSiN and TiWN diffusion barriers for metallization systems to GaN
  29. Transparent Conducting Oxides as Ohmic Contacts for GaSb-based Thermophotovoltaic Cells
  30. Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMT
  31. p-type conducting ZnO: fabrication and characterisation
  32. MBE growth and characterization of InAs/GaAs for infrared detectors
  33. Defects in GaMnAs - influence of annealing and growth conditions
  34. Influence of substrate miscut angle on dislocation density in GaAs/Si heterostructures obtained by HRXRD
  35. Study of Long-Term Stability of Ohmic Contacts to GaN
  36. Luminescent properties of wide bandgap materials at room temperature
  37. Lattice parameters changes of GaMnAs layers induced by annealing
  38. Structural and optical properties of high temperature and high pressure treated Si:H,D
  39. Microstructure of high temperature - pressure treated nitrogen doped Si determined by TEM, PL and X-Ray methods
  40. Thermoelectric power of Czochralski silicon containing electrically active oxygen nanoclusters
  41. Effect of the DAC treatment on the nanomaterials of type Si-O

Presentation: Poster at Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth, by Andrzej Misiuk
See On-line Journal of Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

Submitted: 2007-01-09 10:23
Revised:   2009-06-07 00:44
© 1998-2018 pielaszek research, all rights reserved Powered by the Conference Engine