Ion-beam-induced formation of amorphous silicon (a-Si) and its solid phase epitaxial re-growth (SPER) during annealing of implanted single crystalline silicon (c-Si) have attracted significant interest because of their importance for fabrication of Si devices [1]. SPER of a-Si depends, among others parameters, on processing temperature (HT) and pressure (HP) [2].

The structures prepared by implantation of Cz-Si with some metallic ions and annealed under HP have been reported to indicate interesting magnetic properties, of possible application in spintronics [3 - 5]. The HT - HP treatment of Si implanted with manganese (Si:Mn) affects its microstructure and magnetic ordering in a specific way [3, 5]. This motivated us to perform detailed investigation of the effect of HP applied at annealing of Si:Mn on its properties, related to SPER of a-Si.

Mn⁺ ions were implanted at room temperature with doses, D = 2x10¹⁵ – 1.2x10¹⁶ cm^-2 and energy, E = 160 keV, into (001) oriented p–type Czochralski grown silicon (Cz-Si). The Si:Mn samples were processed in Ar atmosphere for up to 10 h at up to 1400 K under HP up to 1.2 GPa. The depth distribution of Mn was investigated by Secondary Ions Mass Spectrometry (SIMS). Photoluminescence (PL) and X-Ray measurements were applied to determine the sample microstructure.

Mn⁺ implantation produces a-Si near the implanted ions range (R_p = 140 nm), up to about 0.25 mm depth. The PL spectra of as-implanted samples are featureless confirming complete amorphisation of the near – surface layer of Si:Mn.

SPER of a-Si is strongly dependent on implanted dose, on HT, processing time (t) and HP. Processing of the Si:Mn samples (D = 2x10¹⁵ cm^-2) for t = 1 h at 870 - 1000 K, both under 10⁵ Pa and 1.2 GPa, results in the sharp minimum in Mn concentration at ~ 150 nm depth below the surface. SPER results in the movement of the a-c interface towards the surface. Since the solubility of Mn in c-Si is low, this re-crystallization expels Mn atoms from the re-growth region and the a-c interface moves toward the surface. The excess Mn atoms are accumulated at the a-c interface and so, depending also on the D value, the Mn concentration reach to a point, at which re-crystallization can not push longer excess Mn out of c-Si.

In the case of processing at 1070 – 1170 K, the a-Si is converted in part into polycrystalline material (as confirmed by X-Ray and PL measurements) while manganese silicides (such as Mn₄Si₇ [6]) are formed.

In Si:Mn prepared by high dose implantation (D ³ 1x10¹⁶ cm^-2) and processed at ³ 1170 K, the effective out-diffusion of Mn to the Si:Mn surface increases with uniform stress applied; SPER and the Mn distribution are strongly dependent on p and t.

Our results help in understanding the mechanisms of SPER and, in the particular case of Si:Mn, suggest a new route to prepare, by the appropriate HT – HP treatment, the specific Si-Mn materials belonging to the Diluted Magnetic Semiconductor family.

[1] L. Pelaz, L.A. Marguez, J. Barbolla, J. Appl. Phys., 96 (2004) 5947.

[2] A. Misiuk, B. Surma, J. Bak-Misiuk, Solid State Phen., 108-109 (2005) 351.

[3] A. Misiuk, J. Bak-Misiuk, B. Surma, W. Osinniy, M. Szot, T. Story, J. Jagielski, J. Alloys Comp., 423 (2006) 201.

[4] A. Misiuk, L. Chow, A. Barcz, B. Surma, J. Bak-Misiuk, P. Romanowski, W. Osinniy, F. Salman, G. Chai, M. Prujszczyk, A. Trojan, in: High Purity Silicon 9, Eds: C.L. Claeys, R. Falster, M. Watanabe, P. Stallhofer, ISBN 1-56677-504-3, 2006, p. 481.

[5] A. Misiuk, B. Surma, J. Bak-Misiuk, A. Barcz, W. Jung, W. Osinniy, A. Shalimov, Mater. Sci. Semicond. Process., 9 (2006) 270.

[6] U. Gottlieb, A. Sulpice, B. Lambert-Andron, O. Laborde, J. Alloys Comp. 361 (2003) 13.

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2. Optical and Spectroscopy of nanosized system on Si base after implantation and thermal treatment under enhanced hydrostatic pressure
3. Substructure of the metal nanomaterials after the intensive external influence
4. Reconstruction of lattice structure of ion-implanted near-surface regions of HgCdTe epitaxial layers
5. Effect of high pressure annealing on defect structure of GaMnAs
6. Observation of defects in g - irradiated Cz-si annealed under high pressure
7. Elecrical and optical studies of undoped GaP grown by LEC method
8. Effect of stress on structural transformations in GaMnAs
9. Spectroscopy of Cz-Si samples subjected to implantation and thermal treatment under enhanced hydrostatic pressure.
10. Secondary Ion Mass Spectroscopic Study of Mn-Implanted Silicon after Thermal Annealing
11. Structure and Magnetization of Defect-Associated Sites in Silicon
12. The role of radiation defects in HgCdTe epitaxial growth
13. Optical properties of p-type ZnO:(N, As, Sb)
14. Effect of the Annealing Atmosphere on the Quality of ZnO Crystal Surface
15. Structure properties of bulk ZnO crystals
16. Diffusion of Mn in gallium arsenide.
17. Structure and related properties of Si:Mn annealed under enhanced hydrostatic pressure
18. Buried nano-structured layers in high temperature-pressure treated Cz-Si:He
19. Defect structure of silicon crystals implanted with nitrogen - a study of Si:N annealed under high hydrostatic pressure.
20. Influence of enhanced temperature and pressure on structural transformations in pre-annealed Cz-Si
21. Pressure- assistance lateral nanostructuring of the epitaxial silicon layers with SeGe quantum wells
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25. Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMT
26. p-type conducting ZnO: fabrication and characterisation
27. MBE growth and characterization of InAs/GaAs for infrared detectors
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30. Study of Long-Term Stability of Ohmic Contacts to GaN
31. Luminescent properties of wide bandgap materials at room temperature
32. Lattice parameters changes of GaMnAs layers induced by annealing
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34. Microstructure of high temperature - pressure treated nitrogen doped Si determined by TEM, PL and X-Ray methods
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