Jaroslaw Domagala

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Affiliation:

Polish Academy of Sciences, Institute of Physics

address: al. Lotników 32/46, Warszawa, 02-668, Poland
phone: +48-22-8436601
fax: +48-22-8430926
web: http://www.ifpan.edu.pl

Participant:

E-MRS Fall Meeting 2003

began: 2003-09-15
ended: 2003-09-11
Presented:
E-MRS Fall Meeting 2003
Lattice parameters changes of GaMnAs layers induced by annealing

Publications:
  1. Bowing of epitaxial structures grown on bulk GaN substrates
  2. Catalytic growth by molecular beam epitaxy and properties of ZnTe-based semiconductor nanowires
  3. Defects in GaMnAs - influence of annealing and growth conditions
  4. Determination of stress in composite engineered substrates for GaN-based RF power devices
  5. Distribution of strain in laterally overgrown GaAs layers determined by x-ray diffraction
  6. Effect of high pressure annealing on defect structure of GaMnAs
  7. Effect of stress on structural transformations in GaMnAs
  8. Growth and characterization of thin films of ZnO by Atomic Layer Epitaxy
  9. High-pressure phase transition and compressibility of zinc-blende HgZnSe mixed crystals
  10. Influence of high temperature annealing on the local atomic structure around Mn atoms and magnetic properties of (Ga,Mn)As layers
  11. Lattice parameters changes of GaMnAs layers induced by annealing
  12. Liquid phase growth and characterization of laterally overgrown GaSb epitaxial layers
  13. Structural inhomogenities in GdCa4O(BO3)3 single crystals
  14. Structure of Si:Mn annealed under enhanced stress conditions
  15. X-ray Diffraction as a Tool of InGaN layer Characterization.



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