MBE growth and characterization of InAs/GaAs for infrared detectors
|Kazimierz Regiński 1, Janusz Kaniewski 1, Kamil Kosiel 1, Tomasz R. Przesławski 1, Jadwiga Bak-Misiuk 2|
1. Institute of Electron Technology (ITE), al. Lotników 32/46, Warszawa 02-668, Poland
The growth of InAs epilayers on GaAs substrates has been a subject of intense studies over the past few years, due to important device applications of such layers in optoelectronics. In the field of high-speed infrared detectors, InAs is especially attractive as an absorption layer, due to its narrow band gap and high electron mobility. On the other hand, a semi-insulating GaAs is very convenient as a substrate, due to its transparency. However, the large lattice mismatch (7.3%) between InAs and GaAs causes major problems in obtaining high quality material.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium C, by Kazimierz Regiński
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-06-17 14:12 Revised: 2009-06-08 12:55