Microstructure of high temperature - pressure treated nitrogen doped Si determined by TEM, PL and X-Ray methods

Deren Yang 1,  Jin Xu 1,  Andrzej Misiuk 2,  Barbara Surma 2,3,  Jadwiga Bak-Misiuk 

1. Zhejiang University, Stete Key Lab of Silicon Materials (ZJU), Zhe Da Lu 38, Hangzhou 310027, China
2. Institute of Electron Technology (ITE), al. Lotników 32/46, Warszawa 02-668, Poland
3. Institute of Electronic Materials Technology (ITME), Wólczyńska 133, Warszawa 01-919, Poland

Abstract

Oxygen as the main impurity has the multiple influence on silicon crystals. It has been confirmed that nitrogen can enhance the formation of oxygen precipitates while it suppress the formation of voids. It has been reported that external stress influences the formation of oxygen precipitates. But few results related to oxygen precipitates generated under high pressures (HP) at high temperatures (HT) were reported.
In this paper, we investigate microstructure of nitrogen doped Czochralski silicon (NCZ) treated under 1.2 GPa at 1000 - 1570 K by means of PL, TEM, FTIR and X-Ray methods.
In NCZ and CZ-Si treated at 1230 K under 1 GPa, the strong D1 dislocation-related PL peak at about 0.81eV was observed. After the treatment at 1400K under 1 GPa, the D1 as well as D4 lines were detected in the NCZ silicon, of the higher intensity if compared with the case of CZ-Si treated at the same conditions. PL at 1.1 eV related to interband transition was of higher intensity in NCZ.

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Presentation: oral at E-MRS Fall Meeting 2003, Symposium B, by Deren Yang
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-05-09 02:59
Revised:   2003-05-23 05:27
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