Elzbieta Dynowska

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Affiliation:

Polish Academy of Sciences, Institute of Physics

address: al. Lotników 32/46, Warszawa, 02-668, Poland
phone: +48-22-8436601
fax: +48-22-8430926
web: http://www.ifpan.edu.pl

Participant:

E-MRS Fall Meeting 2003

began: 2003-09-15
ended: 2003-09-11
Presented:
E-MRS Fall Meeting 2003
High-pressure phase transition and compressibility of zinc-blende HgZnSe mixed crystals

Publications:
  1. Application of Ti-Al-N MAX-phase for contacts to GaN
  2. Catalytic growth by molecular beam epitaxy and properties of ZnTe-based semiconductor nanowires
  3. Comparison of various GaSb-based device structures for application in thermophotovoltaic cells
  4. Crystalline structure and surface morphology of DyxOy films grown on Si
  5. Effect of high pressure annealing on defect structure of GaMnAs
  6. High-pressure phase transition and compressibility of zinc-blende HgZnSe mixed crystals
  7. Optical and magnetooptical properties of the p-type ZnMnO.
  8. Optical properties of p-type ZnO:(N, As, Sb)
  9. Preparation and characterization of hexagonal MnTe and ZnO layers
  10. p-type conducting ZnO: fabrication and characterisation
  11. Structure characterisation of MBE-grown ZnSe:Cr layers
  12. Structure of Si:Mn annealed under enhanced stress conditions
  13. Transparent p-type ZnO obtained by Ag doping
  14. Use of element selective methods for characterization of thin films



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