Buried nano-structured layers in high temperature-pressure treated Cz-Si:He

Andrzej Misiuk 1,  Barbara Surma 1,2,  Jadwiga Bak-Misiuk 3

1. Institute of Electron Technology (ITE), al. Lotników 32/46, Warszawa 02-668, Poland
2. Institute of Electronic Materials Technology (ITME), Wólczyńska 133, Warszawa 01-919, Poland
3. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland

Abstract

The effects of treatment of helium implanted Czochralski grown silicon (Cz-Si:He, He ion dose up to 10(17)cm(-2),at energy up to 300 keV) at HT up to 1400 K under hydrostatic pressure, HP, up to 1.2 GPa are investigated by transmission electron microscopy, photoluminescence and X-Ray methods.

The treatment at up to 920 K under HP results in a creation of buried nano-structured layers containing thin-walled He-filled cavities and bubbles.

The Cz-Si:He samples treated at even higher HT indicate the presence of dislocated (defected) buried layers; their structure depends strongly on HP applied.

HP affects diffusivity of implanted helium and of implantation - induced point defects and thus promotes a creation of smaller but more numerous cavities / bubbles as well as of other defects near the range of implanted helium ions.

Related papers
  1. Structure of Si:Mn annealed under enhanced stress conditions
  2. Optical and Spectroscopy of nanosized system on Si base after implantation and thermal treatment under enhanced hydrostatic pressure
  3. Substructure of the metal nanomaterials after the intensive external influence
  4. Effect of high pressure annealing on defect structure of GaMnAs
  5. Ultra thin silicon wafers technology for mirror application
  6. Observation of defects in g - irradiated Cz-si annealed under high pressure
  7. Effect of stress on structural transformations in GaMnAs
  8. Spectroscopy of Cz-Si samples subjected to implantation and thermal treatment under enhanced hydrostatic pressure.
  9. Secondary Ion Mass Spectroscopic Study of Mn-Implanted Silicon after Thermal Annealing
  10. Structure and Magnetization of Defect-Associated Sites in Silicon
  11. Stress - mediated solid phase epitaxial re - growth of a-Si at annealing of Si:Mn
  12. Effect of the Annealing Atmosphere on the Quality of ZnO Crystal Surface
  13. Structure properties of bulk ZnO crystals
  14. Structure and related properties of Si:Mn annealed under enhanced hydrostatic pressure
  15. Defect structure of silicon crystals implanted with nitrogen - a study of Si:N annealed under high hydrostatic pressure.
  16. Influence of enhanced temperature and pressure on structural transformations in pre-annealed Cz-Si
  17. Pressure- assistance lateral nanostructuring of the epitaxial silicon layers with SeGe quantum wells
  18. MBE growth and characterization of InAs/GaAs for infrared detectors
  19. Defects in GaMnAs - influence of annealing and growth conditions
  20. Influence of substrate miscut angle on dislocation density in GaAs/Si heterostructures obtained by HRXRD
  21. Lattice parameters changes of GaMnAs layers induced by annealing
  22. Structural and optical properties of high temperature and high pressure treated Si:H,D
  23. Microstructure of high temperature - pressure treated nitrogen doped Si determined by TEM, PL and X-Ray methods
  24. Thermoelectric power of Czochralski silicon containing electrically active oxygen nanoclusters
  25. Effect of the DAC treatment on the nanomaterials of type Si-O

Presentation: oral at E-MRS Fall Meeting 2005, Symposium I, by Andrzej Misiuk
See On-line Journal of E-MRS Fall Meeting 2005

Submitted: 2005-05-23 14:34
Revised:   2005-05-23 14:56
Google
 
Web science24.com
© 1998-2008 pielaszek research, all rights reserved Powered by the Conference Engine