The aim of this work is to compare carrier concentration, diffusion coefficient and shape of the manganese atomic profile in GaAs layers treated under different annealing conditions. Diffusion was performed from implanted Mn as well as from external source of Mn. Manganese implanted GaAs, GaAs:Zn and GaAs:Te bulk samples were investigated. Implantation was performed at room temperature to a dose of 10¹⁶/cm² at an energy of 100 keV. The samples, protected with AlN layers, were annealed at 800^OC and 900^OC with RTA (rapid thermal annealing) method as well as at 900^OC and 1000^OC in sealed quartz ampoule.

After removing the AlN films the extent of diffusion of the implanted species was characterized using the SIMS (Secondary Ion Mass Spectrometry) technique.

The depth profiles of in-diffused manganese strongly indicate that the diffusion coefficient D is concentration-dependent. In case of quartz ampoule annealing of implanted samples the Mn diffusivity was found larger when GaAs was annealed with arsenic overpressure combined with the AlN cap than that annealed without cap. Over ten times shallower diffusion range in uncovered sample then that in covered with AlN is interpreted in terms of generation of additional vacancies in the Ga sub-lattice. Mn atoms incorporate in Ga sites lowering diffusion coefficient. In case of diffusion from external source into differently doped GaAs, the largest diffusion coefficient was found for GaAs:Zn. This result indicates highest Mn diffusivity in sample with low Fermi level, which provides lowest Ga vacancies concentration. Both results confirm an interstitial diffusion mechanism.

The Boltzmann-Matano analysis was employed to evaluate the concentration–dependent diffusion coefficient of Mn in GaAs.

1. Structure of Si:Mn annealed under enhanced stress conditions
2. Reconstruction of lattice structure of ion-implanted near-surface regions of HgCdTe epitaxial layers
3. Effect of high pressure annealing on defect structure of GaMnAs
4. Elecrical and optical studies of undoped GaP grown by LEC method
5. Effect of stress on structural transformations in GaMnAs
6. Secondary Ion Mass Spectroscopic Study of Mn-Implanted Silicon after Thermal Annealing
7. Structure and Magnetization of Defect-Associated Sites in Silicon
8. Stress - mediated solid phase epitaxial re - growth of a-Si at annealing of Si:Mn
9. The role of radiation defects in HgCdTe epitaxial growth
10. Optical properties of p-type ZnO:(N, As, Sb)
11. ELECTRICAL AND OPTICAL PROPERTIES OF ZnO AND ZnO:Cr CRYSTALS, GROWN BY CVT METHOD
12. TaSiN, TiSiN and TiWN diffusion barriers for metallization systems to GaN
13. Transparent Conducting Oxides as Ohmic Contacts for GaSb-based Thermophotovoltaic Cells
14. Electrical Properties of GaN/AlGaN Hetrostructures
15. Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMT
16. Preparation and characterization of hexagonal MnTe and ZnO layers
17. p-type conducting ZnO: fabrication and characterisation
18. Mg diffusion in GaN:Mg grown by metalorganic vapor-phase epitaxy MOVPE
19. Diffusion and diffusion induced defects in GaN
20. Study of Long-Term Stability of Ohmic Contacts to GaN
21. Problems with cracking of Al_xGa_1_-_xN layers
22. Luminescent properties of wide bandgap materials at room temperature
23. Argon as a Pressure-Transmitting Medium, Loading Diamond Anvil Cell (DAC) vs Phase Diagram