Influence of enhanced temperature and pressure on structural transformations in pre-annealed Cz-Si

Andrzej Misiuk 2Jerzy Ciosek 2Jadwiga Bak-Misiuk 4Barbara Surma 2,3Jacek Ratajczak 2Artem Shalimov 4Victor G. Zavodinsky 1Andrzej Kudła 2

1. Institute of Materials Science, Tikhookeanskaya 153, Khabarovsk 680042, Russian Federation
2. Institute of Electron Technology (ITE), al. Lotników 32/46, Warszawa 02-668, Poland
3. Institute of Electronic Materials Technology (ITME), Wólczyńska 133, Warszawa 01-919, Poland
4. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland


Processing of Czochralski silicon (Cz-Si, semiconductor in microelectronics and optoelectronics) at high temperature (HT) leads to clustering of oxygen always present in Cz-Si (oxygen content, co, can reach > 1.1 x1018 cm-3 ), with a creation of Si02-x precipitates exhibiting tensile stress on the matrix. Oxygen precipitation, the stress mentioned and so the defect structure of Cz-Si are affected by hydrostatic pressure (HP) exerted by inert medium at HT. The effect of HT - HP treatment (typically for 5 h) at 1230 /1400 K under HP up to 1.2 GPa on structural transformations in Cz-Si was investigated by microhardness, photoluminescence (PL), ellipsometric, and related measurements.
To create nucleation centres for precipitation (NC's), Cz-Si was subjected to one step pre-annealing at 720 K (samples A, resulting co = 1 x1018 cm-3 ) or to 4 steps pre-annealing at up to 1000 K (samples B, co = 3.6x1017 cm-3 ).
Pre-annealing of Cz-Si at 720 K for up to 20 h affects its microhardness (H) only slightly while the B samples are less hard (H equals to 15.9 and 14.4 GPa, respectively). The HT - HP treatment of A samples results in decreased co (after the treatments at 1230 K under 0.01 GPa and 1.2 GPa, co equals to 7.3x1017 cm-3 and 5.8x1017 cm-3, respectively). The treatment of B samples at 1230/1400K under HP results in increased H (up to 16.6 GPa) while the density of dislocations (evidenced by the presence of PL lines at 0.81 eV and 0.87 eV) decreases with HP in the case of treatment at 1230 K but increases after the treatments at 1400 K.
Structural transformations in treated Cz-Si are related to the effect of HP on the creation and stability of NC's as well as on diffusivity of oxygen and of Si interstitial.

Related papers
  1. Self-organized metallodielectric eutectic nanoparticle based composite material: manufacturing and properties
  2. Defect distribution along needle-shaped PrVO4 single crystals grown by the slow-cooling method
  3. Growth of SiC by PVT method with different sources of the cerium impurity, CeO2 or CeSi2
  4. The Rossendorf beamline BM20 at the ESRF: Overview and perspectives
  5. Can we control the process of room temperature ferromagnetic clusters formation in GaMnAs matrix?
  6. Structural transformations of GaMnAs layer annealed under enhanced hydrostatic pressure
  7. Microstructure of silicon implanted with transition metals
  8. Low magnetization of thick substrates – the origin of giant magnetization of thin films on top of them?
  9. Structure of Si:Mn annealed under enhanced stress conditions
  10. Measurement of distorting magnetic field inside the scanning electron microscope with the use of microscope itself
  11. Determination of densities of various dislocation types in GaN – comparison of TEM and improved hot acid etching method
  12. Optical and Spectroscopy of nanosized system on Si base after implantation and thermal treatment under enhanced hydrostatic pressure
  13. Substructure of the metal nanomaterials after the intensive external influence
  14. Effect of high pressure annealing on defect structure of GaMnAs
  15. Comparative study of superthin TiNx layer by XPS and low energy SIMS
  16. Ultra thin silicon wafers technology for mirror application
  17. Observation of defects in g - irradiated Cz-si annealed under high pressure
  18. Effect of stress on structural transformations in GaMnAs
  19. Spectroscopy of Cz-Si samples subjected to implantation and thermal treatment under enhanced hydrostatic pressure.
  20. Comparison of various GaSb-based device structures for application in thermophotovoltaic cells
  21. Secondary Ion Mass Spectroscopic Study of Mn-Implanted Silicon after Thermal Annealing
  22. Structure and Magnetization of Defect-Associated Sites in Silicon
  23. Stress - mediated solid phase epitaxial re - growth of a-Si at annealing of Si:Mn
  24. Metastable Phase and Structural Transitions of Superthin Ti/Si and TiN/SiN Multilayers
  25. Effect of the Annealing Atmosphere on the Quality of ZnO Crystal Surface
  26. Structure properties of bulk ZnO crystals
  27. TEM study of iridium silicide contact layers for Low Schottky Barrier MOSFETs
  28. Structure and related properties of Si:Mn annealed under enhanced hydrostatic pressure
  29. Buried nano-structured layers in high temperature-pressure treated Cz-Si:He
  30. Defect structure of silicon crystals implanted with nitrogen - a study of Si:N annealed under high hydrostatic pressure.
  31. Pressure- assistance lateral nanostructuring of the epitaxial silicon layers with SeGe quantum wells
  32. Phase relationships in annealed Cu-Al-O layers
  33. TaSiN, TiSiN and TiWN diffusion barriers for metallization systems to GaN
  35. MBE growth and characterization of InAs/GaAs for infrared detectors
  36. Defects in GaMnAs - influence of annealing and growth conditions
  37. Influence of substrate miscut angle on dislocation density in GaAs/Si heterostructures obtained by HRXRD
  38. Transmission Electron Microscopy of Iridium Silicide Contacts for Advanced MOSFET Structures with Schottky Source and Drain
  39. Fabrication of GaSb microlenses by photo and e-beam lithography and dry etching
  40. Lattice parameters changes of GaMnAs layers induced by annealing
  41. Structural and optical properties of high temperature and high pressure treated Si:H,D
  42. Microstructure of high temperature - pressure treated nitrogen doped Si determined by TEM, PL and X-Ray methods
  43. Development of Indium Tin Oxide (ITO) films for the Bragg reflectors application
  44. Thermoelectric power of Czochralski silicon containing electrically active oxygen nanoclusters
  45. Effect of the DAC treatment on the nanomaterials of type Si-O

Presentation: poster at E-MRS Fall Meeting 2005, Symposium F, by Jerzy Ciosek
See On-line Journal of E-MRS Fall Meeting 2005

Submitted: 2005-05-12 13:08
Revised:   2009-06-07 00:44
© 1998-2018 pielaszek research, all rights reserved Powered by the Conference Engine