Influence of enhanced temperature and pressure on structural transformations in pre-annealed Cz-Si

Andrzej Misiuk 2Jerzy Ciosek 2Jadwiga Bak-Misiuk 4Barbara Surma 2,3Jacek Ratajczak 2Artem Shalimov 4Victor G. Zavodinsky 1Andrzej Kudła 2

1. Institute of Materials Science, Tikhookeanskaya 153, Khabarovsk 680042, Russian Federation
2. Institute of Electron Technology (ITE), al. Lotników 32/46, Warszawa 02-668, Poland
3. Institute of Electronic Materials Technology (ITME), Wólczyńska 133, Warszawa 01-919, Poland
4. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland

Abstract

Processing of Czochralski silicon (Cz-Si, semiconductor in microelectronics and optoelectronics) at high temperature (HT) leads to clustering of oxygen always present in Cz-Si (oxygen content, co, can reach > 1.1 x1018 cm-3 ), with a creation of Si02-x precipitates exhibiting tensile stress on the matrix. Oxygen precipitation, the stress mentioned and so the defect structure of Cz-Si are affected by hydrostatic pressure (HP) exerted by inert medium at HT. The effect of HT - HP treatment (typically for 5 h) at 1230 /1400 K under HP up to 1.2 GPa on structural transformations in Cz-Si was investigated by microhardness, photoluminescence (PL), ellipsometric, and related measurements.
To create nucleation centres for precipitation (NC's), Cz-Si was subjected to one step pre-annealing at 720 K (samples A, resulting co = 1 x1018 cm-3 ) or to 4 steps pre-annealing at up to 1000 K (samples B, co = 3.6x1017 cm-3 ).
Pre-annealing of Cz-Si at 720 K for up to 20 h affects its microhardness (H) only slightly while the B samples are less hard (H equals to 15.9 and 14.4 GPa, respectively). The HT - HP treatment of A samples results in decreased co (after the treatments at 1230 K under 0.01 GPa and 1.2 GPa, co equals to 7.3x1017 cm-3 and 5.8x1017 cm-3, respectively). The treatment of B samples at 1230/1400K under HP results in increased H (up to 16.6 GPa) while the density of dislocations (evidenced by the presence of PL lines at 0.81 eV and 0.87 eV) decreases with HP in the case of treatment at 1230 K but increases after the treatments at 1400 K.
Structural transformations in treated Cz-Si are related to the effect of HP on the creation and stability of NC's as well as on diffusivity of oxygen and of Si interstitial.

 

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Presentation: poster at E-MRS Fall Meeting 2005, Symposium F, by Jerzy Ciosek
See On-line Journal of E-MRS Fall Meeting 2005

Submitted: 2005-05-12 13:08
Revised:   2009-06-07 00:44