Influence of enhanced temperature and pressure on structural transformations in pre-annealed Cz-Si
|Andrzej Misiuk 2, Jerzy Ciosek 2, Jadwiga Bak-Misiuk 4, Barbara Surma 2,3, Jacek Ratajczak 2, Artem Shalimov 4, Victor G. Zavodinsky 1, Andrzej Kudła 2|
1. Institute of Materials Science, Tikhookeanskaya 153, Khabarovsk 680042, Russian Federation
Processing of Czochralski silicon (Cz-Si, semiconductor in microelectronics and optoelectronics) at high temperature (HT) leads to clustering of oxygen always present in Cz-Si (oxygen content, co, can reach > 1.1 x1018 cm-3 ), with a creation of Si02-x precipitates exhibiting tensile stress on the matrix. Oxygen precipitation, the stress mentioned and so the defect structure of Cz-Si are affected by hydrostatic pressure (HP) exerted by inert medium at HT. The effect of HT - HP treatment (typically for 5 h) at 1230 /1400 K under HP up to 1.2 GPa on structural transformations in Cz-Si was investigated by microhardness, photoluminescence (PL), ellipsometric, and related measurements.
Presentation: poster at E-MRS Fall Meeting 2005, Symposium F, by Jerzy Ciosek
See On-line Journal of E-MRS Fall Meeting 2005
Submitted: 2005-05-12 13:08 Revised: 2009-06-07 00:44