Effect of the DAC treatment on the nanomaterials of type Si-O

Natalya B. Efros 2Boris M. Efros 2Natalya V. Shishkova 2Andrzej Misiuk 1

1. Institute of Electron Technology (ITE), al. Lotników 32/46, Warszawa 02-668, Poland
2. National Academy of Sciences of Ukraine, A.Galkin Donetsk Institute for Physics & Technology (DonPTI NASU), Roza Luxemburg 72, Donetsk 83114, Ukraine

Abstract

Extensive experiments studies of the - IV elements have been made in recent years. Motivations have included the rich variety of phase and structural transitions.

Different SiO2-x defects can be created in Czochralski grown silicon, Cz - Si, by appropriate pre-annealing at atmospheric pressure (105 Pa). Some data concerning the effect of enhanced hydrostatic pressure on creation of defects in the nanomaterial Si - SiO2-x system have been reported for defects - containing Cz - Si subjected to the cyclic hydrostatic pressure treatment.

The increase of defect concentration in the hydrostatic pressure - treated Cz- Si nanomaterial samples with initially present SiO2-x precipitates can be considered as a proof of hydrostatic pressure - induced massive creation of defects on before - created oxygen - related defects. However, in the case of some DAC - treated samples, a misfit dislocation network was not directly proved to be created because of too small sample dimension in comparison to the resolution of the spectroscopy and X-ray methods.

The study of these nanomaterial samples was carried out by spectroscopical methods under pressure too. In particular, it was revealed that the sample with high deffect density indicated the transparency ~ 55-70% in the wavelength range 800-1100 nm with some maximum at 930 nm at the initial state the effect possibly connected with the sample non-homogeneity. At application of the high pressure (~5 GPa) the value of transparenvy decreases up to ~10% in the wavelength range of 800-925 nm and later on transparency value increases sharply to ~100% at 1100 nm wavelength. Further pressure rise (up to ~10 GPa) resulted in an increase of the transparency value up to 20% at 800-900 nm range and later on it increases up to 55% at 1100 nm wavelength. Thus with the pressure rise, the absorption edge of forbidden zone moved to higher wavelengths.

 

Related papers
  1. Structural transformations of GaMnAs layer annealed under enhanced hydrostatic pressure
  2. Microstructure of silicon implanted with transition metals
  3. Structure of Si:Mn annealed under enhanced stress conditions
  4. Optical and Spectroscopy of nanosized system on Si base after implantation and thermal treatment under enhanced hydrostatic pressure
  5. Substructure of the metal nanomaterials after the intensive external influence
  6. Effect of high pressure annealing on defect structure of GaMnAs
  7. Observation of defects in g - irradiated Cz-si annealed under high pressure
  8. Effect of stress on structural transformations in GaMnAs
  9. Spectroscopy of Cz-Si samples subjected to implantation and thermal treatment under enhanced hydrostatic pressure.
  10. Secondary Ion Mass Spectroscopic Study of Mn-Implanted Silicon after Thermal Annealing
  11. Structure and Magnetization of Defect-Associated Sites in Silicon
  12. Stress - mediated solid phase epitaxial re - growth of a-Si at annealing of Si:Mn
  13. Structure and related properties of Si:Mn annealed under enhanced hydrostatic pressure
  14. Buried nano-structured layers in high temperature-pressure treated Cz-Si:He
  15. Defect structure of silicon crystals implanted with nitrogen - a study of Si:N annealed under high hydrostatic pressure.
  16. Influence of enhanced temperature and pressure on structural transformations in pre-annealed Cz-Si
  17. Pressure- assistance lateral nanostructuring of the epitaxial silicon layers with SeGe quantum wells
  18. ExplosiveTreatment Effect on Structure and Properties of (gamma+epsilon) Alloy on the Basis of Fe-Mn-Solid Solution
  19. Formation of BCC martensite in the stable FCC materials under severe plastic deformation
  20. Surface nanostructures and tribological properties of metallic materials
  21. Structure and properties of ultrafine grained nickel after packet hydroextrusion
  22. Influence of substrate miscut angle on dislocation density in GaAs/Si heterostructures obtained by HRXRD
  23. Structural and optical properties of high temperature and high pressure treated Si:H,D
  24. Microstructure of high temperature - pressure treated nitrogen doped Si determined by TEM, PL and X-Ray methods
  25. Thermoelectric power of Czochralski silicon containing electrically active oxygen nanoclusters

Presentation: poster at E-MRS Fall Meeting 2003, Symposium F, by Natalya B. Efros
See On-line Journal of E-MRS Fall Meeting 2003

Submitted: 2003-05-05 11:47
Revised:   2009-06-08 12:55