Structural and optical properties of high temperature and high pressure treated Si:H,D
|Jadwiga Bak-Misiuk 4, Andrzej Misiuk 2, Artem Shalimov 4, A. Wnuk 2, Barbara Surma 2,3, I.V Antonova 1, V.P Popov 1, Jadwiga Trela 4|
1. Institute of semiconductor physics (ISP), Lavrentiev, Novosibirsk, Russian Federation
Single crystalline silicon implanted with hydrogen /deuterium (Si:H,D) indicates (in the implanted areas) interesting properties in respect its photoluminescence properties and of gettering the harmful impurities by the implantation disturbed areas. Structural perfection and other properties of Si:H,D have been reported to be strongly affected by temperature.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium B, by Jadwiga Bak-Misiuk
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-14 11:58 Revised: 2009-06-08 12:55
|© 1998-2018 pielaszek research, all rights reserved||Powered by the Conference Engine|