Single crystalline silicon implanted with hydrogen /deuterium (Si:H,D) indicates (in the implanted areas) interesting properties in respect its photoluminescence properties and of gettering the harmful impurities by the implantation disturbed areas. Structural perfection and other properties of Si:H,D have been reported to be strongly affected by temperature.
The effect of high temperature and pressure (HT-HP) treatment on the structural perfection of Si:H,D prepared by Si implantation with high hydrogen (deuterium) doses was investigated in presented work. The 001 oriented Czochalski grown Si single crystals (Cz-Si) were implanted with H⁺ or D⁺ at doses (d) higher than 1.7x10¹⁷ cm^-2. For example, Cz:Si:H was prepared by hydrogen implantation with energy, E = 24 keV and d = 2.710¹⁷ cm^-2 using the ion plasma source. After implantation, the Cz-Si:H,D samples were (HT-HP) treated at HT up to 1000⁰ C under HP up to 1.1 GPa for up to 10 h. Structural properties of Cz-Si:H,D were investigated by high-resolution X-ray diffraction. Measurements of the rocking curve (RC) shape and reciprocal space mapping (RSM) were performed for the symmetrical 004 reflection. The photoluminescence (PL) spectra of HT and HP treated Cz-Si:H were determined at 6 K (excitation with Ar laser, λ = 488 nm).
Enhanced hydrostatic pressure of ambient gas at annealing of Cz-Si:H (D) prepared by high dose implantation results in the changed defect structure dependent on HP, HT and treatment time. For the (HT-HP) treated samples, apparent changes of defect structure were observed through the changed diffuse scattering intensity as well as the presence and position of defect-related PL peaks. Our results can be interpreted as indicating on enhanced creation of small defects in the Si surface layers, more pronounced after the treatments under the highest applied pressure.