Tunneling Anisotropic Magnetoresistance effect in p+-(Ga,Mn)As/n+-GaAs Esaki diode structure.

Andreas Einwanger 1Mariusz Ciorga 1Janusz Sadowski 1,2,3Werner Wegscheider 1Dieter Weiss 1

1. Institut für Experimentelle und Angewandte Physik Universität Regensburg (Uni. Regensb), Universitätsstraße 31, Regensburg 93040, Germany
2. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
3. Lund University, MAX-lab, Lund SE-221 00, Sweden

Abstract

We have fabricated devices to investigate electrical spin injection from a ferromagnetic (Ga,Mn)As layer into a non-magnetic GaAs layer in the lateral transport geometry. The Esaki diode structure p+-(Ga,Mn)As/n+-GaAs is used to circumvent the problem of fast spin relaxation of holes injected from a p-type ferromagnet into GaAs. Under a reverse bias applied to such a structure spin-polarized electrons, with longer spin relaxation times than holes, tunnel from (Ga,Mn)As valence band through the depletion layer into GaAs conduction band [1]. Here we report on magnetotransport investigations of the Esaki diode in both in-plane and perpendicular external magnetic field. The sample was rotated in the in-plane field to investigate the dependence of the resulting magnetoresistance on the angle between applied in-plane field and directions of crystallographic axes of the (Ga,Mn)As layer. Obtained results resemble the Tunneling Anisotropic Magnetoresistance (TAMR) effect discovered recently in a normal-metal-insulator-ferromagnetic-semiconductor tunneling device [2].

[1]. M. Kohda et al., Jpn. J. Appl. Phys 40, L1274 (2001).

[2]. C. Could et al., Phys. Rev. Lett. 93, 117203 (2004).

 

Related papers
  1. Critical exponents of dilute ferromagnetic semiconductors (Ga,Mn)N and (Ga,Mn)As
  2. Optical properties of GaAs:Mn nanowires
  3. Photoreflectance study of Ga(Bi,As) and (Ga,Mn)As epitaxial layers grown under tensile and compressive strain
  4. MBE growth, structural, magnetic, and electric properties of (In,Ga)As-(Ga,Mn)As core-shell nanowires
  5. Quaternary (Ga,Mn)BiAs ferromagnetic semiconductor -MBE growth, structural and magnetic properties
  6. Stany Mn 3d w paśmie walencyjnym Ga1-xMnxSb
  7. Can we control the process of room temperature ferromagnetic clusters formation in GaMnAs matrix?
  8. Structural transformations of GaMnAs layer annealed under enhanced hydrostatic pressure
  9. Electronic structure of Mn atoms in (Ga,Mn)As layers modified by high temperature annealing
  10. Effect of high pressure annealing on defect structure of GaMnAs
  11. Influence of high temperature annealing on the local atomic structure around Mn atoms and magnetic properties of (Ga,Mn)As layers
  12. Catalytic growth by molecular beam epitaxy and properties of ZnTe-based semiconductor nanowires
  13. Effect of stress on structural transformations in GaMnAs
  14. Formation of epitaxial MnSb and MnBi layers on GaMnAs
  15. Magnetotransport properties of ultrathin GaMnAs layers
  16. Giant planar Hall effect in ferromagnetic (Ga,Mn)As layers
  17. Magneto-conductance through nanoconstriction in ferromagnetic (Ga,Mn)As film
  18. Defects in GaMnAs - influence of annealing and growth conditions
  19. Photoemission study of the LT-GaAs
  20. Gallium nitride surface formation and modification by Mn deposition - photoemission studies with use of synchrotron radiation
  21. Lattice parameters changes of GaMnAs layers induced by annealing

Presentation: Poster at E-MRS Fall Meeting 2006, Symposium E, by Mariusz Ciorga
See On-line Journal of E-MRS Fall Meeting 2006

Submitted: 2006-05-20 09:56
Revised:   2009-06-07 00:44