Observation of defects in g - irradiated Cz-si annealed under high pressure

Krzysztof Wieteska 1Wojciech Wierzchowski 2Andrzej Misiuk 3M. Prujszczyk 3Ivana Capan 4Deren Yang 5Walter Graeff 6

1. Institute of Atomic Energy, Otwock-Świerk 05-400, Poland
2. Institute of Electronic Materials Technology (ITME), Wólczyńska 133, Warszawa 01-919, Poland
3. Institute of Electron Technology (ITE), al. Lotników 32/46, Warszawa 02-668, Poland
4. RUDJER BOSKOVIĆ INSTITUTE, BIJENIČKA C. 54, Zagreb 10 000, Croatia
5. Zhejiang University, Stete Key Lab of Silicon Materials (ZJU), Zhe Da Lu 38, Hangzhou 310027, China
6. Hamburger Synchrotronstrahlungslabor HASYLAB (HASYLAB), Notkestrasse 85, Hamburg D-22603, Germany

Abstract

Samples cut out from Czochralski grown silicon crystals (Cz-Si) including those doped either with nitrogen to 1.2x1015 cm-3 or with germanium to 7x1017 cm-3, were subjected to different thermal and pressure treatments before and after irradiation with high intensity g - rays of 60Co, up to 2350 MRad. The pre-irradiation treatment was performed for 5 h at 800oC, 1000oC, or 1130oC under atmospheric or high argon pressure (HP, up to 11 kbar). The post implantation treatment was performed at room temperature or 1000oC under atmospheric pressure or HP. The reference, not irradiated Cz-Si crystals were also studied. It has been expected that the irradiation can generate a nucleation centres for the formation of oxygen precipitates, while the presence of nitrogen or germanium usually moderates this process.

The creation of defects in the samples was investigated by means of various synchrotron X-ray diffraction methods including observation of the rocking curves, monochromatic beam topography and by several topographic methods using white synchrotron white beam. The experiments were performed at E2 and F1 experimental stations in HASYLAB. In the present case a very important method was the Bragg - case section topography, realised using 5 mm narrow slit, which allows to indicate the presence of small and not well resolved inclusions and to evaluate the perfection of the sample better than other X-Ray methods.

It was found that, in case when the initial treatment was performed at up to 1000oC, the effect of irradiation and of the treatments was not very distinct, and similar for different samples. In the case of the highest pre - irradiation treatment temperature applied (1130oC), we observed the formation of characteristic inclusions. These inclusions were usually of lower concentration and better resolved in the nitrogen - or germanium - doped samples.

The observed effects are related to enhanced radiation hardness of Cz-Si doped with germanium or nitrogen in comparison to that of non doped material (compare [1]).

[1] A. Misiuk, B. Surma, C.A. Londos, J. Bak-Misiuk, W. Wierzchowski, K. Wieteska, W. Graeff „Oxygen precipitation and creation of defects in neutron irradiated Cz-Si annealed under high pressure” physica status solidi c 2 (6) (2005) 1812-1816

 

Related papers
  1. Germanium-doped Crystalline Silicon
  2. New Ca10Li(VO4)7 laser host: growth and properties
  3. Characterization of the defect structure in gadolinium orthovanadate single crystals grown by the Czochralski method
  4. Topographic and reflectometric investigation of 4H silicon carbide epitaxial layer deposited at various growth rates
  5. Synchrotron topographic studies of domain structure in Czochralski grown PrxLa1-xAlO3 crystals
  6. Evaluation of the depth extension of the damages induced by FLASH pulses in silicon crystals
  7. Damage of gallium arsenide created after irradiation by ultra-short VUV laser pulse
  8. Structural transformations of GaMnAs layer annealed under enhanced hydrostatic pressure
  9. Microstructure of silicon implanted with transition metals
  10. Structure of Si:Mn annealed under enhanced stress conditions
  11. Optical and Spectroscopy of nanosized system on Si base after implantation and thermal treatment under enhanced hydrostatic pressure
  12. Substructure of the metal nanomaterials after the intensive external influence
  13. Effect of high pressure annealing on defect structure of GaMnAs
  14. Observation of individual dislocations in 6h and 4h sic by means of back-reflection methods of x-ray diffraction topography
  15. Synchrotron topographic investigation of SiC bulk crystals and epitaxial layers
  16. The investigation of structural perfection and facetting in highly Er - doped Yb3Al5O12 crystals
  17. Effect of stress on structural transformations in GaMnAs
  18. Spectroscopy of Cz-Si samples subjected to implantation and thermal treatment under enhanced hydrostatic pressure.
  19. Secondary Ion Mass Spectroscopic Study of Mn-Implanted Silicon after Thermal Annealing
  20. Structure and Magnetization of Defect-Associated Sites in Silicon
  21. X-ray topography of Ca0.5Sr0.5NdAlO4 single crystal
  22. Stress - mediated solid phase epitaxial re - growth of a-Si at annealing of Si:Mn
  23. Investigation of insulated buried layers obtained by ion implantation in AlGaAs with various Al concentration
  24. Structure and related properties of Si:Mn annealed under enhanced hydrostatic pressure
  25. Buried nano-structured layers in high temperature-pressure treated Cz-Si:He
  26. Defect structure of silicon crystals implanted with nitrogen - a study of Si:N annealed under high hydrostatic pressure.
  27. Influence of enhanced temperature and pressure on structural transformations in pre-annealed Cz-Si
  28. Pressure- assistance lateral nanostructuring of the epitaxial silicon layers with SeGe quantum wells
  29. Influence of substrate miscut angle on dislocation density in GaAs/Si heterostructures obtained by HRXRD
  30. Synchrotron X-ray Diffraction studies of silicon implanted with high energy Ar ions after thermal annealing
  31. Structural and optical properties of high temperature and high pressure treated Si:H,D
  32. Microstructure of high temperature - pressure treated nitrogen doped Si determined by TEM, PL and X-Ray methods
  33. Thermoelectric power of Czochralski silicon containing electrically active oxygen nanoclusters
  34. Morphology control of PbS nanocrystals by a novel hydrothermal process
  35. Synthesis of one-dimensional chalcogenides by a novel hydrothermal process
  36. Effect of the DAC treatment on the nanomaterials of type Si-O

Presentation: Poster at Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth, by Wojciech Wierzchowski
See On-line Journal of Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

Submitted: 2007-01-22 18:18
Revised:   2009-06-07 00:44