Interaction of Mn and Ti atoms with GaN surface - a resonant photoemission study
|Iwona A. Kowalik 4, Bogdan J. Kowalski 4, Bronislaw A. Orlowski , Pawel Kaczor 4, Elżbieta Lusakowska 4, Sigitas Mickevicius 2, Robert L. Johnson 5, Laurent Houssian 3, Jeremy Brison 3, Izabella Grzegory 1, Sylwester Porowski 1|
1. Polish Academy of Sciences, High Pressure Research Center (UNIPRESS), Sokolowska 29/37, Warszawa 01-142, Poland
The aim of the reported work was investigation of Mn/GaN and Ti/GaN interface formation in order to reveal differences and similarities between interaction of these transition metals (TM) with GaN(000-1)-(1x1) surface. In both investigated systems doping with TM atoms leads to important modifications of properties. Annealing of Mn/GaN is considered as a technique suitable for fabrication of a ferromagnetic semiconductor with a Curie temperature higher than room temperature. Ti/GaN system is important as an element of ohmic contacts in nitride-based electronic devices. Thus, knowledge of details of interaction between these TM and GaN are crucial for applications as well as for basic research of electronic structure of open-shell atoms in nitrides. Resonant photoemission experiments were performed in order to compare interactions between Mn or Ti atoms and clean GaN surface, to reveal compounds formed at the interfaces and to relate them to changes in the density of states distribution in the valence bands of Mn/GaN and Ti/GaN formed under UHV conditions.
Presentation: poster at E-MRS Fall Meeting 2004, Symposium C, by Iwona A. Kowalik
See On-line Journal of E-MRS Fall Meeting 2004
Submitted: 2004-04-27 14:49 Revised: 2009-06-08 12:55