Crystalline structure and surface morphology of DyxOy films grown on Si

Sergei Malyshev 2Krystyna Lawniczak-Jablonska 1Elzbieta Dynowska 1Natalia Babushkina 2Ludmila Romanova 2Dmitry Zhygulin 2

1. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
2. Institute of Electronics, National Academy of Science of Belarus, Minsk, Belarus

Abstract

In the last decade a lot of attention was devoted to study the high-k dielectrics (Si3N4, Al2O3, HfO2, ZrO2, La2O3) for producing the microelectronic devices and integrated circuits with the equivalent properties to very thin SiO2. Among the high-k dielectrics being studied, DyxOy appears promising due to its relatively high dielectric constant (k=12) as compared to SiO2 (k =3.9). The crystalline structure and surface morphology of the DyxOy films grown on Si substrates has been studied using grazing synchrotron radiation diffraction (XRD) and atomic field microscopy. The DyxOy films were obtained by Dy evaporation in the Ar/O2 (6%) environment followed by annealing in oxygen or argon. The crystalline structure of the DyxOy films becomes better with increasing their thickness and deposition rate in Ar/O2 environment. The "worth" fine-grained structure closed to amorphous is observed in the DyxOy films with thickness 20.0-30.0 nm deposited at relatively low rates and annealed in oxygen. The thicker DyxOy films deposited at higher rates and annealed in argon have the best polycrystalline structure. The DyxOy roughness is correlated with their crystalline structure. The thinner DyxOy films with the structure closed to amorphous are the smoother. The DyxOy films roughness increases with increasing the drain sizes. There is conformity of the DyxOy surface roughness to the underlying Si surface morphology. The smoother DyxOy surface has the smoother DyxOy-Si interface. The minimum value of the average interface roughness is found to be 0.8 nm in the DyxOy films closed to amorphous. The average interface roughness is measured to be 1.2 nm and 2.0 nm in polycrystalline DyxOy films annealed in O2 and N2, respectively. Based on the obtained results it is concluded that studied DyxOy films are suitable for the further investigation as a gate dielectric in the MOS devices.

 

Related papers
  1. Neutron scattering studies of short-period MnTe/ZnTe superlattices: magnetic order, magnon propagation and confinement
  2. X-ray diffraction studies of (Pb,Cd)Te solid solution – possible new material for thermoelectric applications
  3. Hexagonal MnTe with NiAs structure: thermal expansion coefficients and exchange striction
  4. 1D ZnO-based structures obtained by thermal oxidation of ZnTe and ZnTe/Zn nanowires
  5. Physical properties of unique ZnO single crystals from Oława Foundry
  6. Location of metals in ZnO electrospined nanofibers
  7. Low-temperature expansion of metastable Pb1-xCdxTe solid solution
  8. Can we control the process of room temperature ferromagnetic clusters formation in GaMnAs matrix?
  9. Monocrystalline character of ZnMgTe shell in the core-shell ZnTe/ZnMgTe nanowires
  10. Optimization of technology for contact metallization in electronic devices - XRD and EXAFS studies
  11. Structural transformations of GaMnAs layer annealed under enhanced hydrostatic pressure
  12. Application of Ti-Al-N MAX-phase for contacts to GaN
  13. Transparent p-type ZnO obtained by Ag doping
  14. Phase composition study of natural minerals used as a source of white pigment production
  15. Structure of Si:Mn annealed under enhanced stress conditions
  16. EXAFS investigation of the local atomic structure of di-alanino acid derivative of protoporphyrin IX
  17. Electronic structure of Mn atoms in (Ga,Mn)As layers modified by high temperature annealing
  18. Identification of Mg based phases in ilmenites by X-ray absorption spectroscopy
  19. Effect of high pressure annealing on defect structure of GaMnAs
  20. Influence of high temperature annealing on the local atomic structure around Mn atoms and magnetic properties of (Ga,Mn)As layers
  21. Catalytic growth by molecular beam epitaxy and properties of ZnTe-based semiconductor nanowires
  22. Comparison of various GaSb-based device structures for application in thermophotovoltaic cells
  23. Optical properties of p-type ZnO:(N, As, Sb)
  24. Optical and magnetooptical properties of the p-type ZnMnO.
  25. The single particles approach of x-ray miroanalysis for estimation a phase composition of altered ilmenite used in pigments production
  26. Analysis of stress in buried Ge layers by means of X-ray fluorescence
  27. X-ray fluorescence detection of iron in diaminoacid derivatives of protoporhyrin IX.
  28. Total electron yield X- ray absorption applied for hard materials studies
  29. Preparation and characterization of hexagonal MnTe and ZnO layers
  30. p-type conducting ZnO: fabrication and characterisation
  31. CBN-Ti/TiN composites: hardness and chemical equilibrium as function of temperature
  32. Use of element selective methods for characterization of thin films
  33. Synchrotron Radiation - Sources and Properties
  34. High-pressure phase transition and compressibility of zinc-blende HgZnSe mixed crystals
  35. Structure characterisation of MBE-grown ZnSe:Cr layers
  36. Investigation of Ge quantum dots buried in silicon matrix by x-ray absorption
  37. Characterization of the c- BN/ TiC, Ti3SiC2, TiN systems by element selective spectroscopy

Presentation: poster at E-MRS Fall Meeting 2004, Symposium D, by Sergei Malyshev
See On-line Journal of E-MRS Fall Meeting 2004

Submitted: 2004-07-29 14:55
Revised:   2009-06-08 12:55