Thermoelectric power of Czochralski silicon containing electrically active oxygen nanoclusters
|Andrzej Misiuk 2, Vladimir V. Shchennikov 1, S. V. Popova 1, S. N. Shamin 1, A. V. Galakhov 1, V. P. Galakhov 1, Sergey V. Ovsyannikov 1|
1. Russian Academy of Sciences, Ural Division, Institute of Metal Physics, 18 S.Kovalevskaya str., GSP-170, Ekaterinburg 620219, Russian Federation
Czochralski grown single crystalline silicon, Cz-Si, contains oxygen admixture, in a concentration up to about 0.004 %, typically in the form of interstitials, Oi. At annealing Oi's are gathering creating oxygen and silicon containing clusters with increasing (with annealing temperature) dimensions. In particular, annealing of Cz-Si at about 720 K results in producing of the oxygen-silicon nanoclusters exhibiting electrical activity (thermal donors, TDs ).
Presentation: poster at E-MRS Fall Meeting 2003, Symposium F, by Andrzej Misiuk
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-07 10:27 Revised: 2009-06-08 12:55