Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures

Marek Godlewski 3,7,  Vitalii Y. Ivanov 3,  Elżbieta Lusakowska 3,  R. Bozek 1,  Saulius Miasojedovas 5,  Saulius Jursenas 5,  Karolis Kazlauskas 5,  A. Zukauskas 5,  Ewa M. Goldys 6,  Matthew R. Phillips 4,  T. Bottcher 2,  S. Figge 2,  Detlef Hommel 2

1. Warsaw University, Faculty of Physics, Hoża 69, Warszawa 00-681, Poland
2. University of Bremen, Institute of Solid State Physics, P.O. Box 330440, Bremen 28334, Germany
3. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
4. University of Technology (UTS), Broadway, Sydney 2007, Australia
5. Vilnius University, Institute of Materials Science and Applied Research (IMSAR, VU), Sauletekio 9, building III, Vilnius LT-2040, Lithuania
6. Division of Information and Communication Sciences, Macquarie University, Sydney, Australia
7. Cardinal Stefan Wyszynski University, College of Science, Warszawa, Poland

Abstract

In this communication we discuss effects of n-type doping of GaN epilayers and InGaN/GaN quantum well structures. We evaluate the influence of n-type doping on a structural quality of the samples (using atomic force and scanning electron microscopy), on light emission intensity and on in-plane emission intensity variations. Possible mechanisms responsible for strong enhancement of light emission from doped samples are discuss based on the results of cathodoluminescence, photoluminescence (PL), PL kinetics and PL in-plane variations.

This work was partly supported by the DENIS program of European Union (G5RD-CT-2001-00566).

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Presentation: poster at E-MRS Fall Meeting 2004, Symposium C, by Marek Godlewski
See On-line Journal of E-MRS Fall Meeting 2004

Submitted: 2004-05-06 13:49
Revised:   2004-05-06 13:50
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