Nanostructure of laser annealed Ge-implanted near-surface Si layers
|Julian Auleytner , Dorota Klinger 2, Slawomir Kret 2, Maria Lefeld-Sosnowska 1, Elżbieta Lusakowska 2, Danuta Zymierska 2|
1. Warsaw University, Faculty of Physics, Hoża 69, Warszawa 00-681, Poland
Short high-power laser pulses have been used for annealing of semiconducting layers, amorphised by ion implantation. For ion-implanted samples, laser annealing can be used for reconstruction and correction of lattice distortions and for inducing a redistribution of dopants. The structure of a laser-irradiated sample of a-Si amorphised by ion implantation depends on its initial structure and on the laser-pulse energy density [1-3]. Damage in Si caused by the implantation and annealing processes was studied for different kinds of implanted ions. Implantation with elements of IVA group is especially interesting, in view of the possible formation of Si-Ge and Si-Sn layers.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium B, by Julian Auleytner
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-14 14:00 Revised: 2009-06-08 12:55