Re-distribution of Mn⁺ implanted Czochralski silicon (CzSi:Mn) and floating zone silicon (FzSi:Mn) after thermal annealing between 300ºC and 1000ºC has been studied using secondary ion mass spectrometry (SIMS). The silicon substrates were implanted with 160 keV Mn+ ion to a dose of 1×10¹⁶ cm^-2 at room temperature and at 310ºC. The Mn profiles after annealing above 900ºC showed multiple concentration peaks for the samples implanted at room temperature, indicating the influence of defect structures on the diffusion behavior. For the Si sample that was implanted at 310ºC, only one concentration peak was observed. The SIMS depth profiles were compared with recent reports [1,2] of depth profiles of Mn implanted silicon. We also carried out cross sectional TEM and magnetization measurements to correlate the micro-structural and magnetization data with depth profile obtained by SIMS.

[1] M. Bolduc, C. Awo-Affouda, F. Ramos, and V. P. LaBella, J. Vac. Sci. Technol. A 24(4), 1648 (2006).

[2] A. Misiuk, J. Bak-Misiuk, B. Surma, W. Osinniy, M. Szot, T. Story, J. Jagielski, J. Alloys Comp., 423, 201 (2006).

1. Structure of Si:Mn annealed under enhanced stress conditions
2. Optical and Spectroscopy of nanosized system on Si base after implantation and thermal treatment under enhanced hydrostatic pressure
3. Substructure of the metal nanomaterials after the intensive external influence
4. Reconstruction of lattice structure of ion-implanted near-surface regions of HgCdTe epitaxial layers
5. Effect of high pressure annealing on defect structure of GaMnAs
6. Observation of defects in g - irradiated Cz-si annealed under high pressure
7. Effect of stress on structural transformations in GaMnAs
8. Spectroscopy of Cz-Si samples subjected to implantation and thermal treatment under enhanced hydrostatic pressure.
9. Structure and Magnetization of Defect-Associated Sites in Silicon
10. Stress - mediated solid phase epitaxial re - growth of a-Si at annealing of Si:Mn
11. The role of radiation defects in HgCdTe epitaxial growth
12. Optical properties of p-type ZnO:(N, As, Sb)
13. Diffusion of Mn in gallium arsenide.
14. Structure and related properties of Si:Mn annealed under enhanced hydrostatic pressure
15. Buried nano-structured layers in high temperature-pressure treated Cz-Si:He
16. Defect structure of silicon crystals implanted with nitrogen - a study of Si:N annealed under high hydrostatic pressure.
17. Influence of enhanced temperature and pressure on structural transformations in pre-annealed Cz-Si
18. Pressure- assistance lateral nanostructuring of the epitaxial silicon layers with SeGe quantum wells
19. ELECTRICAL AND OPTICAL PROPERTIES OF ZnO AND ZnO:Cr CRYSTALS, GROWN BY CVT METHOD
20. TaSiN, TiSiN and TiWN diffusion barriers for metallization systems to GaN
21. Transparent Conducting Oxides as Ohmic Contacts for GaSb-based Thermophotovoltaic Cells
22. Thermally stable Ru-Si-O gate electrode for AlGaN/GaN HEMT
23. p-type conducting ZnO: fabrication and characterisation
24. Influence of substrate miscut angle on dislocation density in GaAs/Si heterostructures obtained by HRXRD
25. Study of Long-Term Stability of Ohmic Contacts to GaN
26. Luminescent properties of wide bandgap materials at room temperature
27. Structural and optical properties of high temperature and high pressure treated Si:H,D
28. Microstructure of high temperature - pressure treated nitrogen doped Si determined by TEM, PL and X-Ray methods
29. Thermoelectric power of Czochralski silicon containing electrically active oxygen nanoclusters
30. Nanostructured layers in high temperature-pressure treated silicon implanted with helium
31. Effect of the DAC treatment on the nanomaterials of type Si-O