Dimethylzinc and diethylzinc as precursors for monocrystalline zinc oxide grown by Atomic Layer Deposition

Łukasz Wachnicki 1Małgorzata I. Łukasiewicz 1Tomasz A. Krajewski 1Grzegorz Łuka 1Bogdan J. Kowalski 1Bartłomiej S. Witkowski 2Krzysztof Kopalko 1Ewa Przezdziecka 1Jaroslaw Domagala 1Marek Godlewski 1,2Elżbieta Guziewicz 1

1. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
2. Cardinal Stefan Wyszynski University, College of Science, Warszawa, Poland

Abstract
A new area in the semiconductor technology is related to the change of the device architecture from planar to three-dimensional [1]. This imposes critical restrictions on temperature of the semiconductor processing as in 3D structures metal passes are placed not only at the top, but also below of the device. Typical temperature limit here is 350 0C. This temperature is much lower than typically used in the silicon technology, therefore a lot of efforts is focused now on new materials, which can be grown inside the above temperature limit.

One of them is zinc oxide, which is a II-VI semiconductor with a direct energy gap of 3.37 eV at room temperature. At present, ZnO has many potential applications as solar cells, piezoelectric transducers, ultraviolet light emitters or gas sensors. We show that zinc oxide is also an appropriate material for 3D applications, because monocrystalline ZnO layers can be obtained at temperature below 3000C.

 We present structural, morphological and optical properties of zinc oxide thin films grown by the Atomic Layer Deposition method at the temperature range between 200 0C and 350 0C. ZnO layers were deposited on a gallium nitride substrate using water as an oxygen precursor and diethylzinc or dimethylzinc as a zinc precursor. The obtained ZnO films show bright luminescence of excitonic origin. Defect-related luminescence bands observed in red and green spectral regions are correlated with the composition measured by the EDX analysis. A high resolution X-ray diffraction proves that our zinc oxide films are monocrystalline with FWHM of 00.2 peak equal to230 arcsec.

The work was partially supported by EU within the European Regional Development Found thorough grant Innovative Economy No. POIG.01.01.02-00-008/08.

[1] M. Godlewski et al., Microel.Eng. 85, 2434 (2008)

Related papers
  1. Nanoparticles for medical imaging 
  2. The effect of annealing on properties of Europium doped ZnO nanopowders obtained by a microwave hydrothermal method
  3. Microwave conductivity of ZnO:Co and ZnO:Cu thin films with nano-size metallic Co/Cu inclusions.
  4. Tb3+ ion luminescence enhancement in yttria host lattice obtained via microwave hydrothermal process
  5. Quantum semiconductor nanostructures for applications in biology and medicine -development and commercialisation of new generation devices for molecular diagnostics on the basis of new Polish semiconductor devices
  6. Defect distribution along needle-shaped PrVO4 single crystals grown by the slow-cooling method
  7. Zinc oxide films grown by atomic layer deposition: from material properties to device applications
  8. GaN substrates with variable surface miscut for laser diode applications
  9. Photoreflectance study of Ga(Bi,As) and (Ga,Mn)As epitaxial layers grown under tensile and compressive strain
  10. MBE growth, structural, magnetic, and electric properties of (In,Ga)As-(Ga,Mn)As core-shell nanowires
  11. Quaternary (Ga,Mn)BiAs ferromagnetic semiconductor -MBE growth, structural and magnetic properties
  12. Electronic and optical properties – As and As+Sb doped ZnO grown by PA-MBE
  13. Hydrothermal growth of ZnO nanorods for solar cells applications
  14. Epitaxial growth and characterization of zinc oxide nanorods obtained by the hydro-thermal method
  15. Growth of zinc oxide and dielectric films using Atomic Layer Deposition method from organic precursors
  16. Grown ZnMgO/ZnO/ZnMgO heterostructures on p-type Si(111) by MBE method
  17. Dual-acceptor doped p-ZnO:(As+Sb)/n-GaN heterojunctions grown by PA-MBE as a highly selective UV detector
  18. Stany Mn 3d w paśmie walencyjnym Ga1-xMnxSb
  19. Rezonansowe badania fotoemisyjne ferromagnetycznych warstw ZnCoO
  20. Resonant photoemission study of Sm atoms on ZnO surface
  21. X-ray measurements of type II InAs/GaSb superlattice in a wide angular range using the P08 beamline at PETRAIII
  22. X-ray photoemission from CdTe/PbTe/CdTe nanostructure in normal and grazing-incidence modes
  23. Investigation of strain and lattice parameters distribution in epitaxial laterally overgrown InGaN/GaN structures 
  24. Mangan w warstwach ZnMnO hodowanych metodą osadzania warstw atomowych
  25. ZnO and core/shell ZnO/ZnS nanofibers: Characterization and applications
  26. Monocrystalline character of ZnMgTe shell in the core-shell ZnTe/ZnMgTe nanowires
  27. Lokalne otoczenie atomów kobaltu w cienkich warstwach ZnCoO
  28. Surface morphology of InGaN layers
  29. Contactless electroreflectance of ZnSe layers grown by atomic layer epitaxy
  30. Electrical and optical properties of zinc oxide layers obtained by Atomic Layer Deposition
  31. Zinc oxide grown by Atomic Layer Deposition - a material for novel 3D electronics
  32. Thin films of ZnS and ZnSe by Atomic Layer Deposition for light sensor applications
  33. Photovoltaic cells based on nickel phthalocyanine and zinc oxide formed by atomic layer deposition
  34. Effects related to deposition temperature of ZnCoO films grown by Atomic Layer Deposition – uniformity of Co distribution, structural, electric and magnetic properties
  35. Diffusion profiles of transition metals (TM= Co or Mn) in ZnO and GaN incorporated by annealing of thin TM film
  36. Transparent p-type ZnO obtained by Ag doping
  37. Effect of annealing on the structure and microstructure of Pr doped ZrO2-Y2O3 nanocrystals
  38. Synthesis of doped ZnO nanopowders in microwave hydrothermal reactors
  39. Synthesis of Al doped ZnO nanopowders and their enhanced luminescence
  40. How we can stimulate intra-shell emissions of rare earth and transition metal ions in thin films and in nanoparticles
  41. Structure of Si:Mn annealed under enhanced stress conditions
  42. ZnO thin films for organic/inorganic heterojunctions
  43. Combining microwave and pressure techniques for hydrothermal synthesis of ZnO and ZrO2 nanopowders doped with a range of metal ions
  44. Luminescence properties of zinc oxide nanopowders doped with Al ions obtained by the hydrothermal and vapour condensation methods.
  45. Gd atoms on Si (111) surface – AFM and photoemission study
  46. Mn 3d electrons in the valence band of Mn/Ge0.9Mn0.1Te- a resonant photoemission study
  47. Effect of high pressure annealing on defect structure of GaMnAs
  48. Wide band-gap II-VI semiconductors for optoelectronic applications
  49. Influence of high temperature annealing on the local atomic structure around Mn atoms and magnetic properties of (Ga,Mn)As layers
  50. ZnO homoepitaxial growth by Atomic Layer Epitaxy technique.
  51. Low temperature ZnMnO by ALD
  52. Catalytic growth by molecular beam epitaxy and properties of ZnTe-based semiconductor nanowires
  53. X-ray Diffraction as a Tool of InGaN layer Characterization.
  54. Structural inhomogenities in GdCa4O(BO3)3 single crystals
  55. Liquid phase growth and characterization of laterally overgrown GaSb epitaxial layers
  56. ZnMnO Films grown by Atomic Layer Deposition with uniform Mn distribution
  57. Effect of annealing on electrical properties of low temperature ZnO films
  58. Distribution of strain in laterally overgrown GaAs layers determined by x-ray diffraction
  59. Determination of stress in composite engineered substrates for GaN-based RF power devices
  60. Effect of stress on structural transformations in GaMnAs
  61. Doping of ZnO nanopowders with Mn, Ni and Cr In an ultrasound and microwave driver hydrothermal reaction
  62. Time-resolved ODMR investigations of II-VI based DMS heterostructures
  63. Method of Manganese co-doping of LT ZnO films
  64. Photoluminescence of ZnO films studied by femptosecond sapphire:Ti laser
  65. Optical properties of p-type ZnO:(N, As, Sb)
  66. Optical and magnetooptical properties of the p-type ZnMnO.
  67. Effect of the Annealing Atmosphere on the Quality of ZnO Crystal Surface
  68. Two color spectroscopy of ZnSe:Cr
  69. Photo-EPR studies of charge tunneling processes in CdxZn(1-x)Se:Fe,Cr (0 ≤ x ≤ 0.3) crystals
  70. Luminescence of CdMnTe Crystals in Magnetic Field
  71. Luminescence of doped nanoparticles of wide band gap II-VI compounds
  72. Doping of ZnO nanopowders with Mn and Cr in an ultrasound and microwave driven hydrothermal reaction
  73. GaN(0001) surface Fe atoms doped
  74. Preparation and characterization of hexagonal MnTe and ZnO layers
  75. p-type conducting ZnO: fabrication and characterisation
  76. Growth and characterization of thin films of ZnO by Atomic Layer Epitaxy
  77. Dynamics of spin interactions in II-Mn-VI semiconductors studied with time-resolved optically detected magnetic resonance
  78. Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures
  79. Fe photoionization transition in ZnSSe:Fe crystals - photo-ESR studies
  80. Bowing of epitaxial structures grown on bulk GaN substrates
  81. Defects in GaMnAs - influence of annealing and growth conditions
  82. In-depth and in-plane profiling of InGaN-based laser diodes and heterostructures
  83. Cathodoluminescence study of n-type doped GaN epilayers and GaN/InGaN quantum well structures
  84. Compensation mechanisms in magnesium doped GaN
  85. Optical and magnetic resonance investigations of ZnO crystals doped with transition metal ions
  86. Optical and ODMR study of GaN-based HEMT structures
  87. High-pressure phase transition and compressibility of zinc-blende HgZnSe mixed crystals
  88. Photo-ESR and optical studies of Cr photoionization transition in CdZnSe:Cr crystals
  89. Gallium nitride surface formation and modification by Mn deposition - photoemission studies with use of synchrotron radiation
  90. Luminescent properties of wide bandgap materials at room temperature
  91. Lattice parameters changes of GaMnAs layers induced by annealing
  92. Mn doped ZnTe (110) (1x1) surface in Resonant Photoemission study

Presentation: Oral at E-MRS Fall Meeting 2009, Symposium C, by Łukasz Wachnicki
See On-line Journal of E-MRS Fall Meeting 2009

Submitted: 2009-05-08 14:22
Revised:   2013-02-28 15:04
Google
 
Web science24.com
© 1998-2018 pielaszek research, all rights reserved Powered by the Conference Engine