X-ray Diffraction as a Tool of InGaN layer Characterization.

Mike Leszczynski 1Marcin Krysko 1Jaroslaw Domagala 2Robert Czernecki 1Paweł Prystawko 1Grzegorz Targowski 1

1. Polish Academy of Sciences, Institute of High Pressure Physics (UNIPRESS), Sokolowska 29/37, Warszawa 01-142, Poland
2. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland

Abstract

InGaN layers are the heart of green/blue/violet optoelectronic devices. They are not only used as light-emitting quantum wells but also as anti-stressor layers or electron-injecting layers.

The most significant feature of InGaN layers is their tendency to be segregated. The In-rich clusters are very efficient light emitters despite a high dislocation density in heteroepitaxial relaxed structures, but at the same time they are a serious problem in more sophisticated devices, as laser diodes.

This work shows how X-ray diffraction can be used to monitor the In-segregation in the layers. A new simulation program enables us to estimate the range of In-content in thick InGaN layers as well as in the thin quantum wells. The XRD results are well matched with those obtained using transmission electron microscopy, as well as photoluminescecne techniques.

Related papers
  1. Semipolar and nonpolar AlGaN growth mechanisms under N-rich conditions in PAMBE
  2. Defect distribution along needle-shaped PrVO4 single crystals grown by the slow-cooling method
  3. GaN substrates with variable surface miscut for laser diode applications
  4. Semipolar (2021) UV LEDs and LDs grown by PAMBE
  5. Photoreflectance study of Ga(Bi,As) and (Ga,Mn)As epitaxial layers grown under tensile and compressive strain
  6. MBE growth, structural, magnetic, and electric properties of (In,Ga)As-(Ga,Mn)As core-shell nanowires
  7. Quaternary (Ga,Mn)BiAs ferromagnetic semiconductor -MBE growth, structural and magnetic properties
  8. Multicolor laser diode arrays for medical applications
  9. X-ray measurements of type II InAs/GaSb superlattice in a wide angular range using the P08 beamline at PETRAIII
  10. Investigation of strain and lattice parameters distribution in epitaxial laterally overgrown InGaN/GaN structures 
  11. Monocrystalline character of ZnMgTe shell in the core-shell ZnTe/ZnMgTe nanowires
  12. Efficiency „droop” in nitride light emitters
  13. Nitrides lasers after BluRay
  14. Surface morphology of InGaN layers
  15. Inhomogeneities of InGaN/GaN MOVPE multi quantum wells grown with two temperatures process studied by transmission electron microscopy.
  16. Zinc oxide grown by Atomic Layer Deposition - a material for novel 3D electronics
  17. Dimethylzinc and diethylzinc as precursors for monocrystalline zinc oxide grown by Atomic Layer Deposition
  18. Polymer film-coated high electron mobility transistors, based on GaN heterostructures, as sensors for some benzene derivatives
  19. Structure of Si:Mn annealed under enhanced stress conditions
  20. Effect of high pressure annealing on defect structure of GaMnAs
  21. Influence of high temperature annealing on the local atomic structure around Mn atoms and magnetic properties of (Ga,Mn)As layers
  22. Catalytic growth by molecular beam epitaxy and properties of ZnTe-based semiconductor nanowires
  23. Blue laser diodes manufacturing in Poland
  24. Structural inhomogenities in GdCa4O(BO3)3 single crystals
  25. Liquid phase growth and characterization of laterally overgrown GaSb epitaxial layers
  26. Distribution of strain in laterally overgrown GaAs layers determined by x-ray diffraction
  27. Determination of stress in composite engineered substrates for GaN-based RF power devices
  28. High-resolution photoinduced transient spectroscopy of defect centers in Mg-doped GaN
  29. Effect of stress on structural transformations in GaMnAs
  30. Rietveld refinement for polycrystalline indium nitride
  31. PLASTIC PROPERTIES OF GaN AND Al2O3 CRYSTAL: FEM-SIMULATION OF NANOINDENTATION CONFIRMED BY HIGH-RESOLUTION MICROSCOPY
  32. Microstructure of homoepitaxially grown InGaN/GaN, violet light emitting laser diodes.
  33. Growth and characterization of thin films of ZnO by Atomic Layer Epitaxy
  34. Built-in electric fields in group III-nitride light emitting quantum structures
  35. Bowing of epitaxial structures grown on bulk GaN substrates
  36. Defects in GaMnAs - influence of annealing and growth conditions
  37. The optimalisation of the GaN and GaN/AlGaN heterojunctions on bulk crystals using plasma-assisted molecular beam epitaxy
  38. High-pressure phase transition and compressibility of zinc-blende HgZnSe mixed crystals
  39. Optical Detection of 2DEG in GaN/AlGaN Structures - High Magnetic Field Studies
  40. Lattice parameters changes of GaMnAs layers induced by annealing

Presentation: Oral at Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth, by Mike Leszczynski
See On-line Journal of Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

Submitted: 2007-01-25 18:07
Revised:   2009-06-07 00:44
Google
 
Web science24.com
© 1998-2018 pielaszek research, all rights reserved Powered by the Conference Engine