Spectroscopy of Cz-Si samples subjected to implantation and thermal treatment under enhanced hydrostatic pressure.
|Evgeny Shemchenko 1, Alexander Yakovec 1, Rostyslav V. Shalayev 1, Victor M. Varyukhin 1, Anatoly Prudnikov 1, Boris M. Efros 1, Andrzej Misiuk 2, M. Prujszczyk 2|
1. National Academy of Sciences of Ukraine, A.Galkin Donetsk Institute for Physics & Technology (DonPTI NASU), Roza Luxemburg 72, Donetsk 83114, Ukraine
Recent developments in the fields of integrated circuits, CD technology, and of transmission of large volume information resulted in still growing interest in optical and spectral properties of silicon - related materials, in particular produced basing on single crystalline Czochralski grown silicon, Cz - Si. Electronic states related to the presence of structural defects and impurities in Cz-Si - related materials  are still intensively investigated.
In the presented work, Cz - Si samples prepared by implantation with hydrogen (Si:H) or oxygen (Si:O), and processed at up to 1400 K (HT) under enhanced hydrostatic pressure in argon atmosphere (HP, up to 1.2 GPa) have been investigated. It has been shown that the HT - HP treatment of implanted samples leads to the formation of nano - clusters. The nano - dimensional structure formation in the samples results in turn in essential changes of optical and spectral properties, being dependent on the HT - HP processing parameters.
The mechanism and nature of nano - dimensional structure formation in implanted single crystalline silicon, especially in Si:H, subjected to complex processing [2, 3], and the effects of HT – HP treatment on spectral characteristics of Si:H and Si:O are discussed. Usefulness of such materials for producing of sensors has been demonstrated.
Presentation: Poster at Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth, by Rostyslav V. Shalayev
See On-line Journal of Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth
Submitted: 2007-01-15 15:14 Revised: 2009-06-07 00:44