Spectroscopy of Cz-Si samples subjected to implantation and thermal treatment under enhanced hydrostatic pressure.

Evgeny Shemchenko 1Alexander Yakovec 1Rostyslav V. Shalayev 1Victor M. Varyukhin 1Anatoly Prudnikov 1Boris M. Efros 1Andrzej Misiuk 2M. Prujszczyk 2

1. National Academy of Sciences of Ukraine, A.Galkin Donetsk Institute for Physics & Technology (DonPTI NASU), Roza Luxemburg 72, Donetsk 83114, Ukraine
2. Institute of Electron Technology (ITE), al. Lotników 32/46, Warszawa 02-668, Poland

Abstract

Recent developments in the fields of integrated circuits, CD technology, and of transmission of large volume information resulted in still growing interest in optical and spectral properties of silicon - related materials, in particular produced basing on single crystalline Czochralski grown silicon, Cz - Si. Electronic states related to the presence of structural defects and impurities in Cz-Si - related materials [1] are still intensively investigated.

In the presented work, Cz - Si samples prepared by implantation with hydrogen (Si:H) or oxygen (Si:O), and processed at up to 1400 K (HT) under enhanced hydrostatic pressure in argon atmosphere (HP, up to 1.2 GPa) have been investigated. It has been shown that the HT - HP treatment of implanted samples leads to the formation of nano - clusters. The nano - dimensional structure formation in the samples results in turn in essential changes of optical and spectral properties, being dependent on the HT - HP processing parameters.

The mechanism and nature of nano - dimensional structure formation in implanted single crystalline silicon, especially in Si:H, subjected to complex processing [2, 3], and the effects of HT – HP treatment on spectral characteristics of Si:H and Si:O are discussed. Usefulness of such materials for producing of sensors has been demonstrated.

  1. A. Misiuk, B.M. Efros. Pressure-induced transformations during annealing of silicon implanted with oxygen: Physics and Technology High Pressure, 16 (2006) 49.
  2. A.M. Prudnikov, A. Misiuk, I.E. Tyschenko, B.M. Efros. Solid state transitions investigations in DAC by spectroscopy methods: Defect and Diffusion Forum, 208-209 (2002) 315.
  3. W. Wieteska, W. Wierzchowski, W. Graeff, A. Misiuk, A. Barcz, L. Bryja, V.P. Popov: Acta Phys. Polon. A, 102 (2002) 239.
 

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Presentation: Poster at Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth, by Rostyslav V. Shalayev
See On-line Journal of Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

Submitted: 2007-01-15 15:14
Revised:   2009-06-07 00:44