Structural transformations of GaMnAs layer annealed under enhanced hydrostatic pressure

Jadwiga Bak-Misiuk 1Przemysław Romanowski 1Elzbieta Dynowska 1Andrzej Misiuk 2Janusz Sadowski 1Wolfgang Caliebe 3

1. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
2. Institute of Electron Technology (ITE), al. Lotników 32/46, Warszawa 02-668, Poland
3. Hamburger Synchrotronstrahlungslabor HASYLAB (HASYLAB), Notkestrasse 85, Hamburg D-22603, Germany


Granular GaAs:(Mn,Ga)As structures are currently thoroughly investigated, because such material exhibits a ferromagnetic/superparamagnetic behavior at room temperature depending on cluster size (see e.g. [1]). Specific ferromagnetic precipitates are fairly easily produced in effect of annealing of III–V semiconductors at 400–700°C, yielding the multi-phase materials. The formation of nanoclusters and strains created in the GaAs:(Mn,Ga)As layers correlate with their structure and ferromagnetism existing up to room temperature. Depending on annealing temperature of GaMnAs, small cubic, of the zinc-blende type (ZB), or larger, of the NiAs-type, MnAs nanoclusters are formed [2].

The goal of present work is determination of the influence of annealing under enhanced hydrostatic pressure (HP) on strain state of the GaMnAs/GaAs heteroepitaxial system exhibiting, due to different Mn concentrations in the GaMnAs layer, also the different initial strain state. Ga1-xMnxAs layers with nominal Mn contents x = 0.025, 0.03, 0.04, 0.05 or 0.063 were grown by MBE on the (001)-oriented GaAs substrates at 230°C. Nominal thickness of the layers was 0.8 mm.

After deposition each sample was cut into three pieces. One of them was left untreated, the others were reintroduced into the MBE growth chamber and annealed under As2 flux or under HP = 1.1 GPa in argon atmosphere for 30 min. at T = 500°C. X-ray diffraction measurements were performed using a synchrotron radiation as well as a standard laboratory source of Cu Kα1 radiation.

Figure 1. 2θ/ω scans of 004 reflection for Ga0.96Mn0.04As: 1 – as-grown, 2 – annealed at 500°C under 105 Pa, 3 – processed at 500°C under 1.1 GPa are compared with the (004) substrate reflection.

Enhanced hydrostatic pressure applied during annealing of the MBE grown GaMnAs layers at 500°C results in increasingly strained layers (Fig. 1). This HP-induced strain is definitely dependent also on the layer composition. The creation of additional strain within nanoclusters under the HP-T conditions results in the increasingly strained granular layer state.


[1] A. Kwiatkowski, D. Wasik, M. Kaminska, R. Bozek, J. Szczytko, A. Twardowski, J. Borysiuk, J. Sadowski, J. Gosk, J. Appl. Phys. 101 (2007) 113912.

[2] K. Lawniczak-Jablonska, J. Bak-Misiuk, E. Dynowska, P. Romanowski, J.Z. Domagala, J. Libera, A. Wolska, M.T. Klepka, P. Dluzewski, J. Sadowski, A. Barcz, D. Wasik, A. Twardowski, A. Kwiatkowski, J. Solid State Chem. (2011) in press.


Related papers
  1. Defect distribution along needle-shaped PrVO4 single crystals grown by the slow-cooling method
  2. Critical exponents of dilute ferromagnetic semiconductors (Ga,Mn)N and (Ga,Mn)As
  3. Neutron scattering studies of short-period MnTe/ZnTe superlattices: magnetic order, magnon propagation and confinement
  4. X-ray diffraction studies of (Pb,Cd)Te solid solution – possible new material for thermoelectric applications
  5. Hexagonal MnTe with NiAs structure: thermal expansion coefficients and exchange striction
  6. Optical properties of GaAs:Mn nanowires
  7. 1D ZnO-based structures obtained by thermal oxidation of ZnTe and ZnTe/Zn nanowires
  8. Photoreflectance study of Ga(Bi,As) and (Ga,Mn)As epitaxial layers grown under tensile and compressive strain
  9. Physical properties of unique ZnO single crystals from Oława Foundry
  10. MBE growth, structural, magnetic, and electric properties of (In,Ga)As-(Ga,Mn)As core-shell nanowires
  11. New Ca10Li(VO4)7 laser host: growth and properties
  12. Quaternary (Ga,Mn)BiAs ferromagnetic semiconductor -MBE growth, structural and magnetic properties
  13. Stany Mn 3d w paśmie walencyjnym Ga1-xMnxSb
  14. Low-temperature expansion of metastable Pb1-xCdxTe solid solution
  15. Can we control the process of room temperature ferromagnetic clusters formation in GaMnAs matrix?
  16. Monocrystalline character of ZnMgTe shell in the core-shell ZnTe/ZnMgTe nanowires
  17. Optimization of technology for contact metallization in electronic devices - XRD and EXAFS studies
  18. Microstructure of silicon implanted with transition metals
  19. Application of Ti-Al-N MAX-phase for contacts to GaN
  20. Transparent p-type ZnO obtained by Ag doping
  21. Structure of Si:Mn annealed under enhanced stress conditions
  22. Electronic structure of Mn atoms in (Ga,Mn)As layers modified by high temperature annealing
  23. Optical and Spectroscopy of nanosized system on Si base after implantation and thermal treatment under enhanced hydrostatic pressure
  24. Substructure of the metal nanomaterials after the intensive external influence
  25. Effect of high pressure annealing on defect structure of GaMnAs
  26. Influence of high temperature annealing on the local atomic structure around Mn atoms and magnetic properties of (Ga,Mn)As layers
  27. Catalytic growth by molecular beam epitaxy and properties of ZnTe-based semiconductor nanowires
  28. Observation of defects in g - irradiated Cz-si annealed under high pressure
  29. Effect of stress on structural transformations in GaMnAs
  30. Spectroscopy of Cz-Si samples subjected to implantation and thermal treatment under enhanced hydrostatic pressure.
  31. Comparison of various GaSb-based device structures for application in thermophotovoltaic cells
  32. Secondary Ion Mass Spectroscopic Study of Mn-Implanted Silicon after Thermal Annealing
  33. Structure and Magnetization of Defect-Associated Sites in Silicon
  34. Stress - mediated solid phase epitaxial re - growth of a-Si at annealing of Si:Mn
  35. Tunneling Anisotropic Magnetoresistance effect in p+-(Ga,Mn)As/n+-GaAs Esaki diode structure.
  36. Optical properties of p-type ZnO:(N, As, Sb)
  37. Optical and magnetooptical properties of the p-type ZnMnO.
  38. Effect of the Annealing Atmosphere on the Quality of ZnO Crystal Surface
  39. Structure properties of bulk ZnO crystals
  40. Formation of epitaxial MnSb and MnBi layers on GaMnAs
  41. Magnetotransport properties of ultrathin GaMnAs layers
  42. Giant planar Hall effect in ferromagnetic (Ga,Mn)As layers
  43. Magneto-conductance through nanoconstriction in ferromagnetic (Ga,Mn)As film
  44. Structure and related properties of Si:Mn annealed under enhanced hydrostatic pressure
  45. Buried nano-structured layers in high temperature-pressure treated Cz-Si:He
  46. Defect structure of silicon crystals implanted with nitrogen - a study of Si:N annealed under high hydrostatic pressure.
  47. Influence of enhanced temperature and pressure on structural transformations in pre-annealed Cz-Si
  48. Pressure- assistance lateral nanostructuring of the epitaxial silicon layers with SeGe quantum wells
  49. Crystalline structure and surface morphology of DyxOy films grown on Si
  50. Preparation and characterization of hexagonal MnTe and ZnO layers
  51. p-type conducting ZnO: fabrication and characterisation
  52. MBE growth and characterization of InAs/GaAs for infrared detectors
  53. Defects in GaMnAs - influence of annealing and growth conditions
  54. Use of element selective methods for characterization of thin films
  55. Photoemission study of the LT-GaAs
  56. Influence of substrate miscut angle on dislocation density in GaAs/Si heterostructures obtained by HRXRD
  57. High-pressure phase transition and compressibility of zinc-blende HgZnSe mixed crystals
  58. Structure characterisation of MBE-grown ZnSe:Cr layers
  59. Gallium nitride surface formation and modification by Mn deposition - photoemission studies with use of synchrotron radiation
  60. Lattice parameters changes of GaMnAs layers induced by annealing
  61. Structural and optical properties of high temperature and high pressure treated Si:H,D
  62. Microstructure of high temperature - pressure treated nitrogen doped Si determined by TEM, PL and X-Ray methods
  63. Thermoelectric power of Czochralski silicon containing electrically active oxygen nanoclusters
  64. Effect of the DAC treatment on the nanomaterials of type Si-O

Presentation: Poster at IX Krajowe Sympozjum Użytkowników Promieniowania Synchrotronowego, by Przemysław Romanowski
See On-line Journal of IX Krajowe Sympozjum Użytkowników Promieniowania Synchrotronowego

Submitted: 2011-05-24 16:36
Revised:   2011-06-22 20:13