Influence of substrate miscut angle on dislocation density in GaAs/Si heterostructures obtained by HRXRD
|Artem Shalimov 2, Jadwiga Bak-Misiuk 2, Andrzej Misiuk 1, Maria M. Calamiotou 3, A Georgilakilas 4|
1. Institute of Electron Technology (ITE), al. Lotników 32/46, Warszawa 02-668, Poland
The dislocation density of a GaAs layer grown on a vicinal (001) Si substrate has been studied as a function of Si miscut angle by X-ray diffraction technique. The high-resolution X-ray diffractometer equipped with Bartels monochromator in double and triple crystal modes was used.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium B, by Artem Shalimov
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-06-02 17:04 Revised: 2009-06-08 12:55
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