Rietveld refinement for polycrystalline indium nitride
|Roman Minikayev 1, Wojciech Paszkowicz 1, Sławomir Podsiadło 2, Stanisław Krukowski 3, Mike Leszczynski 3|
1. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
Indium nitride is an attractive semiconductor material for optoelectronic applications. It is a potential material for high-speed electronics and solar cells. The structural data of the bulk material provide a necessary basis in development of such devices. In the present work, the structural information on indium nitride is obtained from high-quality powder diffraction patterns collected at a laboratory diffractometer. Polycrystalline InN powders studied in this paper were prepared from high-purity components. Powder diffraction data were collected at a laboratory Bragg-Brentano diffractometer equipped with a copper X-ray tube, a focusing incident-beam monochromator and a semiconductor strip detector. The applied instrument, described in more detail in Ref. , allows for acquiring the data with excellent statistics and resolution. During sample mounting, efforts were made for reduction of possible preferred orientation effects. The applied structure models include minor-impurity phases. Rietveld refinements were performed using the Fullprof.2k (v. 2.70) program . Values of refined lattice parameters and the free positional parameter of nitrogen are consistent with earlier literature data. The present data complete the recent refinements for AlN and GaN .
Presentation: poster at E-MRS Fall Meeting 2005, Symposium A, by Roman Minikayev
See On-line Journal of E-MRS Fall Meeting 2005
Submitted: 2005-06-28 19:24 Revised: 2014-10-06 14:03
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