Phase relationships in annealed Cu-Al-O layers

Jerzy Ciosek 1,3Wojciech Paszkowicz 2Jan Kubicki 3Anna Piotrowska 1Andrzej Kudła 1Tomasz R. Przesławski 1Piotr Pankowski 2Roman Minikayev 2,4

1. Institute of Electron Technology (ITE), al. Lotników 32/46, Warszawa 02-668, Poland
2. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
3. Military University of Technology, Institute of Optoelectronics (IOE), Kaliskiego 2, Warszawa 00-908, Poland
4. Śląska Akademia Medyczna, Katedra i Oddział Kliniczny Pediatrii w Bytomiu, Batorego 15, Bytom 41-902, Poland

Abstract

Complex materials structures based on Cu-Al-O layer on silicon and fused silica were studied. The Al-O and Cu-O film was deposited by reactive sputtering method. We used a CO2 laser and furnace methods to change the structure of the Cu-Al-O layer.
X-ray diffraction method was used ex situ to study the change of Cu-Al-O structure caused by post-deposition thermal treatment. The diffraction patterns were recorded on a state-of-the-art diffractometer (Philips X'Pert MPD, with CuKα1 radiation; λ = 0.15406 nm) equipped with a Johansson monochromator and a linear semiconductor strip detector.
The optical constants and film thickness were determined using commercial software for data collected at an ellipsometer (WVASE 32).
For investigation of the influence of process-dependent properties of film morphology, the tapping-mode atomic force microscopy was used. Chemical analysis of the interface region was conducted by X-Ray Photoemission Spectroscopy (XPS).
Samples with silicon substrate after post-deposition annealing in furnace in the temperature range of 873 - 1373 K at 1 hour exhibit the layer transparency and p-type conductance. The XPS characteristic shows the peaks at 944 eV and 947 eV attributed for Cu2O, which is a well-known p-type oxide semiconductor. The very thin Cu2O layer was formed on the top of thin films. From the electrical measurements in the van der Pauw configuration the layer has a resistance per square of about 211 Ω, holes mobility of 50.5 cm2/ Vs and carrier density per square of about 5.8. 1014/cm2.

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Presentation: poster at E-MRS Fall Meeting 2004, Symposium D, by Jerzy Ciosek
See On-line Journal of E-MRS Fall Meeting 2004

Submitted: 2004-05-27 12:57
Revised:   2009-06-08 12:55
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