GaN growth by Sublimation Sandwich Method

Michal Kaminski 3Agata Waszkiewicz 3Sławomir Podsiadło 3Zachara Janusz 3Andrzej Ostrowski 3Wojtek Gebicki 1Andrzej Turos 2Wlodek Strupinski 2

1. Warsaw University of Technology, Faculty of Physics, Koszykowa 75, Warszawa 00-662, Poland
2. Institute of Electronic Materials Technology (ITME), Wólczyńska 133, Warszawa 01-919, Poland
3. Warsaw University of Technology, Faculty of Chemistry, Noakowskiego 3, Warszawa 00-664, Poland

Abstract

Sublimation Sandwich Method (SSM) [1] has proven successfully in the growth of both bulk AlN and SiC [2,3] and shows promise for growth of bulk GaN crystals as well. In our investigations, GaN layers were grown by the SSM. Experiments were carried out in a tubular quartz reactor with induction heating at temperatures from 1100OC to 1250OC. GaN layers, grown on Al2O3, obtained by MOCVD were used as the substrate. The area of deposition was 10x10mm. Monocrystaline GaN layers were obtained under atmospheric pressure during a deposition time from 5 to 60 minutes. GaN powder was used as the source of gallium and ammonia as the source of nitrogen. GaN powder and the substrate were placed in a quartz boat on top of a graphite cylinder, which was the heating element. To ensure gallium transfer, temperature gradient was employed between the gallium source and the MOCVD substrate. The obtained GaN layers possessed irregular surface morphology with a thickness range up to 1mm. Raman spectroscopy and X-ray studies were used to investigate the films.
[1] P.G. Baranov et al., MRS Internet J. Nitride Semicond. Res. 3, 50 (1998),
[2] J.H. Edgar et al., J. Cryst.Growth 246 (2002) 187,
[3] Y. Shi et al., J. Cryst.Growth 233 (2001) 177.

 

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Presentation: poster at E-MRS Fall Meeting 2004, Symposium C, by Michal Kaminski
See On-line Journal of E-MRS Fall Meeting 2004

Submitted: 2004-04-27 15:18
Revised:   2009-06-08 12:55