LATTICE PARAMETERS OF INDIUM NITRIDE IN THE 22-310 K TEMPERATURE RANGE

Wojciech Paszkowicz 3Paweł Piszora 2Roman Minikayev 3Michael Knapp 5Carsten Baehtz 1Sławomir Podsiadło 4

1. Hamburger Synchrotronstrahlungslabor HASYLAB (HASYLAB), Notkestrasse 85, Hamburg D-22603, Germany
2. Adam Mickiewicz University, Faculty of Chemistry, Grunwaldzka 6, Poznań 60-780, Poland
3. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
4. Warsaw University of Technology, Faculty of Chemistry, Noakowskiego 3, Warszawa 00-664, Poland
5. Technische Universität Darmstadt, Institute of Materials Science, Petersenstr. 23, Darmstadt 64287, Germany

Abstract

Variation of unit-cell size of indium nitride with temperature has been studied in Refs. [1-3]. The low-temperature range has been only partially explored up to now. In the present study, the lattice parameters for indium nitride were determined using X-ray powder diffraction at a synchrotron radiation source (beamline B2, Hasylab/DESY, Hamburg) in the temperature range from 22 K up to 310 K. An image-plate detector was applied for data collection. The wavelength was calibrated using internal diamond standard, according to the method described in Ref. [4]. The lattice parameters a and c behave in a similar way: they are virtually constant below about 130 K. In the range 200 to 300 K the variation is close to a linear one. Discussion of the results will involve the earlier studies of thermal expansion of indium nitride.

1. Paszkowicz W, Adamczyk J, Krukowski S, Leszczynski M, Porowski S, Sokolowski JA, Michalec M, Lasocha W, Philos, Mag, A 79 (1999) 1145-1154
2. Paszkowicz W, Cerny R, Krukowski S, Powder Diffr. 18 (2003) 114-121
3. Wang K, Reeber RR, Appl. Phys. Lett. 79 (2001) 1602-1604
4. Paszkowicz W, Knapp M, Baehtz C, Minikayev R, Piszora P, Jiang JZ, Bacewicz R, J. Alloys Compds. 382 (2004) 107-111

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Presentation: poster at E-MRS Fall Meeting 2005, Symposium A, by Wojciech Paszkowicz
See On-line Journal of E-MRS Fall Meeting 2005

Submitted: 2005-06-28 21:24
Revised:   2009-06-07 00:44
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