The optimalisation of the GaN and GaN/AlGaN heterojunctions on bulk crystals using plasma-assisted molecular beam epitaxy
|Czeslaw Skierbiszewski 1, M. Siekacz 1, A. Feduniewicz 1, K. Dybko 2, B. Wasilewski 3, Izabella Grzegory 1, Mike Leszczynski 1, B. Pastuszka 1|
1. Polish Academy of Sciences, High Pressure Research Center (UNIPRESS), Sokolowska 29/37, Warszawa 01-142, Poland
In this work comparison of the MBE growth of GaN and AlGaN on dislocation free bulk substrates and GaN/sapphire MOCVD templates is presented. The RF plasma source is used as a source of active Nitrogen. In order to achieve 2D growth, the optimalisation of the Ga to N ratio was performed. The step flow growth mode was obtained for Ga rich conditions (high Ga/N ratio) . We found that for good quality GaN layers, the total Ga flux consists of two components: a) proportional to the growth rate (equal to the Nitrogen flux), b) constant flux which is desorbed from the surface during growth. The latter one strongly depends on the growth temperature. We will discuss the growth diagram and the conditions where smooth step flow growth mode without formation of the Ga droplets on the surface is achieved.
Presentation: oral at E-MRS Fall Meeting 2003, Symposium C, by Czeslaw Skierbiszewski
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-06-17 14:49 Revised: 2009-06-08 12:55