During recent years rapid development of investigations over diluted magnetic semiconductors (DMSs) is observed. Gallium nitride is well known semiconductor, dopant of gadolinium in GaN lattice could result in ferromagnetic properties in this material. Mixture of gallium and gadolinium metals was used as a substrate in presented in this work research. Experiments were carried out in horizontal reactor with resistance heating at temperatures from 1150 to 1250^oC in an ammonia atmosphere. Measurements involving SEM, Raman studies and EXAFS were used to investigate the single crystals obtained.