prof Mike Leszczynski

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Affiliation:


Polish Academy of Sciences, Institute of High Pressure Physics

address: Sokolowska 29/37, Warszawa, 01-142, Poland
phone: +48-22-6324302
fax: +48-22-6324218
web: http://www.unipress.waw.pl

Participant:


E-MRS Fall Meeting 2002

began: 2002-09-15
ended: 2002-09-19
Presented:

Participant:


E-MRS Fall Meeting 2005

began: 2005-09-05
ended: 2005-09-09
Presented:

Participant:


Nano2business workshop

began: 2007-02-07
ended: 2007-02-09
Presented:

Nano2business workshop

Blue laser diodes manufacturing in Poland

Participant:


Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

began: 2007-05-20
ended: 2007-05-24
Presented:

Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

X-ray Diffraction as a Tool of InGaN layer Characterization.

Participant:


E-MRS Fall Meeting 2009

began: 2010-09-14
ended: 2010-09-18
Presented:

E-MRS Fall Meeting 2009

Nitrides lasers after BluRay

E-MRS Fall Meeting 2009

Surface morphology of InGaN layers

Participant:


Nanotechnologia PL 2011

began: 2011-09-19
ended: 2011-09-19
Presented:

Nanotechnologia PL 2011

Multicolor laser diode arrays for medical applications

Participant:


17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

began: 2013-08-11
ended: 2013-08-16
Presented:

Publications:


  1. Blue laser diodes manufacturing in Poland
  2. Bowing of epitaxial structures grown on bulk GaN substrates
  3. Built-in electric fields in group III-nitride light emitting quantum structures
  4. Efficiency „droop” in nitride light emitters
  5. GaN substrates with variable surface miscut for laser diode applications
  6. Inhomogeneities of InGaN/GaN MOVPE multi quantum wells grown with two temperatures process studied by transmission electron microscopy.
  7. Microstructure of homoepitaxially grown InGaN/GaN, violet light emitting laser diodes.
  8. Multicolor laser diode arrays for medical applications
  9. Nitrides lasers after BluRay
  10. PLASTIC PROPERTIES OF GaN AND Al_2O_3 CRYSTAL: FEM-SIMULATION OF NANOINDENTATION CONFIRMED BY HIGH-RESOLUTION MICROSCOPY
  11. Polymer film-coated high electron mobility transistors, based on GaN heterostructures, as sensors for some benzene derivatives
  12. Rietveld refinement for polycrystalline indium nitride

  13. Surface morphology of InGaN layers
  14. The Blue Laser
  15. The optimalisation of the GaN and GaN/AlGaN heterojunctions on bulk crystals using plasma-assisted molecular beam epitaxy
  16. X-ray Diffraction as a Tool of InGaN layer Characterization.



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