Mike Leszczynski

Affiliation:

Polish Academy of Sciences, Institute of High Pressure Physics

Participant:

E-MRS Fall Meeting 2002

Participant:

E-MRS Fall Meeting 2005

Participant:

Nano2business workshop

Participant:

Joint Fith International Conference on Solid State Crystals & Eighth Polish Conference on Crystal Growth

Publications:

1. Blue laser diodes manufacturing in Poland
2. Bowing of epitaxial structures grown on bulk GaN substrates
3. Built-in electric fields in group III-nitride light emitting quantum structures
4. Microstructure of homoepitaxially grown InGaN/GaN, violet light emitting laser diodes.
5. PLASTIC PROPERTIES OF GaN AND Al₂O₃ CRYSTAL: FEM-SIMULATION OF NANOINDENTATION CONFIRMED BY HIGH-RESOLUTION MICROSCOPY
6. Polymer film-coated high electron mobility transistors, based on GaN heterostructures, as sensors for some benzene derivatives

7. Rietveld refinement for polycrystalline indium nitride

8. The Blue Laser
9. The optimalisation of the GaN and GaN/AlGaN heterojunctions on bulk crystals using plasma-assisted molecular beam epitaxy
10. X-ray Diffraction as a Tool of InGaN layer Characterization.