X-Ray Study of Lattice Parameters of GaN in a Broad Temperature Range
|Wojciech Paszkowicz 2, Michael Knapp 1, Helmut Ehrenberg 1, Sławomir Podsiadło 3, Tomasz Szyszko 3|
1. Hamburger Synchrotronstrahlungslabor HASYLAB (HASYLAB), Notkestrasse 85, Hamburg D-22603, Germany
III-V nitrides (AlN, GaN and InN) form one of the most intensively studied families of semiconductors, due to their potential wide applications in short-wave optoelectronics. The lattice mismatch and differences in thermal expansion coefficient values of the layer and of the substrate result in the occurrence of strain in the layers. As the physical properties of the layer are strain-dependent, the knowledge of the thermal expansion of the IIIN layer material is of high importance. Detailed studies of the a and c lattice parameters in a broad temperature range are expected to be useful in development of short-wave optoelectronic devices.
Presentation: poster at E-MRS Fall Meeting 2003, Symposium B, by Wojciech Paszkowicz
See On-line Journal of E-MRS Fall Meeting 2003
Submitted: 2003-05-25 21:48 Revised: 2009-06-08 12:55