Drift-diffusion simulations of gallium nitride based heterostructures

Konrad Sakowski 1,2Pawel Strak 1Stanisław Krukowski 1,3Leszek Marcinkowski 2

1. Polish Academy of Sciences, Institute of High Pressure Physics (UNIPRESS), Sokolowska 29/37, Warszawa 01-142, Poland
2. Warsaw University, Faculty of Mathematics, Computer Science and Mechanics (MIMUW), Banacha 2, Warszawa 02-097, Poland
3. Interdisciplinary Centre for Mathematical and Compuerial Modelling, University of Warsaw (ICM), ul. Pawinskiego 5a, Warszawa 02-106, Poland


We present a computer code for simulations of gallium nitride semiconductor devices. Our program is based on the drift-diffusion approximation. It is capable of simulating of the IV characteristics of the laser diodes and light-emitting diodes under the forward and reverse bias. It also provides approximations of the electrostatic potential, quasi-Fermi levels, carrier concentrations and many other derived values.

The implemented model accounts for radiative and Shockley-Read-Hall recombination, with or without trap-assisted tunneling, piezoelectric effect and interfacial charges. The program is written in a way that allows modifications of the underlying model, so this list is not final and we will include additional phenomena in the future. Our program is written in mixed Octave/C++, which makes it computationally effective and rather flexible in modification.

On our poster we present the model, algorithm, and examples of simulations performed with this program. In particular, simulation results of AlInGaN multiple quantum well heterostructures are discussed.

The research was supported by the European Union within European Regional Development Fund, through grant Innovative Economy (POIG.01.01.02-00-008/08).


Related papers
  1. GaN/AlN junctions - density functional study
  2. Density Functional Theory (DFT) study of GaN(0001) surface in ammonia rich conditions - influence of doping type
  3. An influence of parallel electric field on the dispersion relation of graphene – a new route to Dirac logics
  4. Absorption and emission spectra of InN/GaN superlattice structures by DFT methods
  5. Absorption and emission spectra of AlN/GaN superlattice structures by DFT methods
  6. Bulk GaAs growth by Contactless Liquid Phase Electroepitaxy
  7. Adsorption of ammonia on hydrogen covered GaN(0001) surface – Density Functional Theory (DFT) study
  8. Adsorption of gallium on GaN(0001) surface in ammonia rich conditions - Density Functional Theory (DFT) study
  9. Density Functional Theory (DFT) study of hydrogen on GaN (0001) surface
  10. Surface structure and diffusion of Si and C adatoms on bare SiC(0001) and SiC(0001) surfaces- density functional theory studies
  11. First-principles calculations of structural and electronic properties of GaN(0001)/Ga interface
  12. A density functional  theory study of the Zn, O, O2, and H2O adsorption on the polar ZnO(0001) and ZnO(000-1) surfaces
  13. Surface morphology of InGaN layers
  14. Modelling of the growth of nitrides in ammonia rich environment
  15. Transport properties on nitrogen at high pressure and temperature: viscosity – MD study.
  16. Adsorption processes during growth of GaN by HVPE
  17. Rietveld refinement for polycrystalline indium nitride
  18. Mass flow and reaction analysis of the growth of GaN layers by HVPE

Presentation: Poster at 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17, Topical Session 3, by Konrad Sakowski
See On-line Journal of 17th International Conference on Crystal Growth and Epitaxy - ICCGE-17

Submitted: 2013-04-30 15:33
Revised:   2013-04-30 15:33