Drift-diffusion simulations of gallium nitride based heterostructures |
Konrad Sakowski 1,2, Pawel Strak 1, Stanisław Krukowski 1,3, Leszek Marcinkowski 2 |
1. Polish Academy of Sciences, Institute of High Pressure Physics (UNIPRESS), Sokolowska 29/37, Warszawa 01-142, Poland |
Abstract |
We present a computer code for simulations of gallium nitride semiconductor devices. Our program is based on the drift-diffusion approximation. It is capable of simulating of the IV characteristics of the laser diodes and light-emitting diodes under the forward and reverse bias. It also provides approximations of the electrostatic potential, quasi-Fermi levels, carrier concentrations and many other derived values. |