Method of Manganese co-doping of LT ZnO films

Aleksandra Wójcik 1,  Marek Godlewski 1,2,  Rafał Jakieła 1,  Marcin Klepka 1,  Morad Abouzaid 3,  Pierre Ruterana 3,  Roman Minikayev 1,  Wojciech Paszkowicz 1

1. Polish Academy of Sciences, Institute of Physics, al. Lotników 32/46, Warszawa 02-668, Poland
2. Cardinal Stefan Wyszynski University, College of Science, Deptartment of Mathematics and Natural Sciences, Warszawa, Poland
3. SIFCOM, UMR6176, CNRS-ENSICAEN, 6 Bld Maréchal Juin, Caen 14050, France

Abstract

Lately various methods of doping of ZnO films by Mn have been investigated. In the presented work we used Atomic Layer Deposition to grow ZnO at low temperature (LT) and we studied procedures of doping of these films with Mn ions during the growth process. LT growth conditions were selected to minimize Mn diffusion and formation of various Mn-related oxides. Mn is know to be a fast diffuser in ZnO, which results often in highly inhomogeneous doping, formation of foreign phases and of Mn precipitates. We demonstrate that most of these effects can be avoided by an appropriate selection of growth conditions and by post-growth annealing. The ALD grown LT ZnMnO films show fairly homogeneous in-plane and in-depth Mn content, as we conclude from SIMS, TEM, EPMA and X-ray investigations. These films do not show responses due to inclusions of foreign phases of MnxOy in magnetic investigations.

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Presentation: Poster at E-MRS Fall Meeting 2006, Symposium E, by Marek Godlewski
See On-line Journal of E-MRS Fall Meeting 2006

Submitted: 2006-05-19 14:27
Revised:   2006-05-19 14:52
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